Articles with public access mandates - Hyunsang HwangLearn more
Not available anywhere: 7
All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing
RD Nikam, M Kwak, H Hwang
Advanced Electronic Materials 7 (5), 2100142, 2021
Mandates: US Department of Defense
Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels
J Lee, RD Nikam, M Kwak, H Kwak, S Kim, H Hwang
Advanced Electronic Materials 7 (8), 2100219, 2021
Mandates: US Department of Defense
Strategies to improve the synaptic characteristics of oxygen-based electrochemical random-access memory based on material parameters optimization
J Lee, RD Nikam, M Kwak, H Hwang
ACS Applied Materials & Interfaces 14 (11), 13450-13457, 2022
Mandates: US Department of Defense
Improved synaptic characteristics of oxide-based electrochemical random access memory at elevated temperatures using integrated micro-heater
J Lee, RD Nikam, M Kwak, H Hwang
IEEE Transactions on Electron Devices 69 (4), 2218-2221, 2022
Mandates: US Department of Defense
Highly scalable (30 nm) and ultra-low-energy (~ 5fJ/pulse) vertical sensing ECRAM with ideal synaptic characteristics using ion-permeable graphene electrodes
J Lee, RD Nikam, D Kim, H Hwang
2022 International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2022
Mandates: US Department of Defense
Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to‐Device Engineering
RD Nikam, J Lee, K Lee, H Hwang
Small 19 (40), 2302593, 2023
Mandates: US Department of Defense
Understanding Controlled Ion Doping Mechanism of Vertical Sensing Electrochemical Random Access Memory Using Ion-Permeable Graphene Electrodes
J Lee, RD Nikam, D Kim, H Hwang
IEEE Transactions on Electron Devices 70 (7), 3951-3957, 2023
Mandates: US Department of Defense
Available somewhere: 5
Ultrasensitive artificial synapse based on conjugated polyelectrolyte
W Xu, TL Nguyen, YT Kim, C Wolf, R Pfattner, J Lopez, BG Chae, SI Kim, ...
Nano Energy 48, 575-581, 2018
Mandates: US National Science Foundation
In situ TEM observation on the interface-type resistive switching by electrochemical redox reactions at a TiN/PCMO interface
K Baek, S Park, J Park, YM Kim, H Hwang, SH Oh
Nanoscale 9 (2), 582-593, 2017
Mandates: US Department of Defense
Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
RD Nikam, J Lee, W Choi, W Banerjee, M Kwak, M Yadav, H Hwang
Small 17 (44), 2103543, 2021
Mandates: US Department of Defense
Investigation of Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
C Sung, A Padovani, B Beltrando, D Lee, M Kwak, S Lim, L Larcher, ...
IEEE Journal of The Electron Devices Society 7, 404-408, 2019
Mandates: US Department of Defense
On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing application
RD Nikam, J Lee, W Choi, D Kim, H Hwang
ACS nano 16 (8), 12214-12225, 2022
Mandates: US Department of Defense
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