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| A graphene quantum dot with a single electron transistor as an integrated charge sensor LJ Wang, G Cao, T Tu, HO Li, C Zhou, XJ Hao, Z Su, GC Guo, HW Jiang, ... Applied Physics Letters 97 (26), 262113, 2010 | 150 | 2010 |
| Strong and Tunable Spin− Orbit Coupling of One-Dimensional Holes in Ge/Si Core/Shell Nanowires XJ Hao, T Tu, G Cao, C Zhou, HO Li, GC Guo, WY Fung, Z Ji, GP Guo, ... Nano letters 10 (8), 2956-2960, 2010 | 135 | 2010 |
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| Experimental Observation of Single Skyrmion Signatures in a Magnetic Tunnel Junction NE Penthorn, X Hao, Z Wang, Y Huai, HW Jiang Physical Review Letters 122 (25), 257201, 2019 | 71 | 2019 |
| High performance perpendicular magnetic tunnel junction with Co/Ir interfacial anisotropy for embedded and standalone STT-MRAM applications Y Huai, H Gan, Z Wang, P Xu, X Hao, BK Yen, R Malmhall, N Pakala, ... Applied Physics Letters 112 (9), 092402, 2018 | 47 | 2018 |
| Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM H Yang, X Hao, Z Wang, R Malmhall, H Gan, K Satoh, J Zhang, DH Jung, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.1. 1-38.1. 4, 2017 | 42 | 2017 |
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| Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Experimental studies of scaling behavior of a quantum Hall system with a tunable Landau level mixing YJ Zhao, T Tu, XJ Hao, GC Guo, HW Jiang, GP Guo Physical Review B Condensed Matter And Materials Physics 78 (23), 233301, 2008 | 21* | 2008 |
| Magnetic memory element with composite fixed layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent 9,831,421, 2017 | 19 | 2017 |
| Magnetic memory element with composite fixed layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent 9,831,421, 2017 | 19 | 2017 |
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| Magnetic random access memory with perpendicular enhancement layer Z Wang, H Gan, Y Huai, Y Zhou, X Wang, BK Yen, X Hao US Patent App. 14/797,458, 2015 | 19* | 2015 |
