| Noise in Drain and Gate Current of MOSFETs With High- Gate Stacks P Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ... IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009 | 143 | 2009 |
| A 7nm CMOS technology platform for mobile and high performance compute application S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017 | 69 | 2017 |
| Graphene: Is it the future for semiconductors? An overview of the material, devices, and applications Y Obeng, P Srinivasan The Electrochemical Society Interface 20 (1), 47, 2011 | 69 | 2011 |
| Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys IEEE Electron Device Letters 27 (8), 688-691, 2006 | 69 | 2006 |
| Reliability comparison of triple-gate versus planar SOI FETs F Crupi, B Kaczer, R Degraeve, V Subramanian, P Srinivasan, E Simoen, ... IEEE Transactions on electron devices 53 (9), 2351-2357, 2006 | 53 | 2006 |
| Impact of high-k gate stack material with metal gates on LF noise in n-and p-MOSFETs P Srinivasan, E Simoen, L Pantisano, C Claeys, D Misra Microelectronic Engineering 80, 226-229, 2005 | 45 | 2005 |
| Device reliability metric for end-of-life performance optimization based on circuit level assessment A Kerber, P Srinivasan, S Cimino, P Paliwoda, S Chandrashekhar, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2D-3.1-2D-3.5, 2017 | 34 | 2017 |
| Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics P Srinivasan, E Simoen, R Singanamalla, HY Yu, C Claeys, D Misra Solid-state electronics 50 (6), 992-998, 2006 | 32 | 2006 |
| Interface characterization of high-k dielectrics on Ge substrates D Misra, R Garg, P Srinivasan, N Rahim, NA Chowdhury Materials science in semiconductor processing 9 (4-5), 741-748, 2006 | 31 | 2006 |
| Low-Frequency (1∕ f) Noise Performance of n-and p-MOSFETs with Poly-Si∕ Hf-Based Gate Dielectrics P Srinivasan, E Simoen, L Pantisano, C Claeys, D Misra Journal of the Electrochemical Society 153 (4), G324, 2006 | 31 | 2006 |
| Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions G Wirth, R da Silva, P Srinivasan, J Krick, R Brederlow 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 26 | 2009 |
| SiGe composition and thickness effects on NBTI in replacement metal gate/high-κ technologies P Srinivasan, J Fronheiser, K Akarvardar, A Kerber, LF Edge, ... 2014 IEEE International Reliability Physics Symposium, 6A. 3.1-6A. 3.6, 2014 | 25 | 2014 |
| A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications P Srinivasan, P Colestock, T Samuels, S Moss, F Guarin, B Min 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 24 | 2020 |
| 1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates P Srinivasan, E Simoen, B De Jaeger, C Claeys, D Misra Materials science in semiconductor processing 9 (4-5), 721-726, 2006 | 24 | 2006 |
| Effect of Stress-Induced Degradation in LDMOS Noise Characteristics MI Mahmud, Z Celik-Butler, P Hao, P Srinivasan, F Hou, BL Amey, ... IEEE electron device letters 33 (1), 107-109, 2011 | 20 | 2011 |
| Effect of Nitridation on Low-Frequency (1/f) Noise in n-and p-MOSFETS with HFO2 Gate Dielectrics P Srinivasan, E Simoen, ZM Rittersma, W Deweerd, L Pantisano, ... Journal of the Electrochemical Society 153 (9), G819, 2006 | 20 | 2006 |
| Flicker noise performance on thick and thin oxide FinFETs YM Ding, DD Misra, P Srinivasan IEEE Transactions on Electron Devices 64 (5), 2321-2325, 2017 | 19 | 2017 |
| Accurate model for the threshold voltage fluctuation estimation in 45-nm channel length MOSFET devices in the presence of random traps and random dopants N Ashraf, D Vasileska, G Wirth, P Srinivasan IEEE Electron device letters 32 (8), 1044-1046, 2011 | 19 | 2011 |
| Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks ZM Rittersma, M Vertregt, W Deweerd, S Van Elshocht, P Srinivasan, ... IEEE transactions on electron devices 53 (5), 1216-1225, 2006 | 19 | 2006 |
| Charge trapping in ultrathin hafnium silicate/metal gate stacks P Srinivasan, NA Chowdhury, D Misra IEEE electron device letters 26 (12), 913-915, 2005 | 19 | 2005 |
Luigi PantisanoglobalfoundriesVerified email at imec.be
