| 10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| Quasi-particle properties from tunneling in the v= 5/2 fractional quantum Hall state IP Radu, JB Miller, CM Marcus, MA Kastner, LN Pfeiffer, KW West Science 320 (5878), 899-902, 2008 | 429 | 2008 |
| Electrical control of spin relaxation in a quantum dot S Amasha, K MacLean, IP Radu, DM Zumbühl, MA Kastner, MP Hanson, ... Physical review letters 100 (4), 046803, 2008 | 337 | 2008 |
| High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ... Nanoscale 7 (17), 7896-7905, 2015 | 162 | 2015 |
| Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ... IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018 | 137 | 2018 |
| Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors GV Resta, Y Balaji, D Lin, IP Radu, F Catthoor, PE Gaillardon, ... ACS nano 12 (7), 7039-7047, 2018 | 130 | 2018 |
| Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2 JB Miller, IP Radu, DM Zumbühl, EM Levenson-Falk, MA Kastner, ... Nature Physics 3 (8), 561-565, 2007 | 121 | 2007 |
| How to report and benchmark emerging field-effect transistors Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ... Nature Electronics 5 (7), 416-423, 2022 | 118 | 2022 |
| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 105 | 2018 |
| Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ... 2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013 | 105 | 2013 |
| Energy-dependent tunneling in a quantum dot K MacLean, S Amasha, IP Radu, DM Zumbühl, MA Kastner, MP Hanson, ... Physical review letters 98 (3), 036802, 2007 | 105 | 2007 |
| Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ... Chemical Communications 51 (86), 15692-15695, 2015 | 104 | 2015 |
| All electrical propagating spin wave spectroscopy with broadband wavevector capability F Ciubotaru, T Devolder, M Manfrini, C Adelmann, IP Radu Applied Physics Letters 109 (1), 2016 | 100 | 2016 |
| Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019 | 99 | 2019 |
| Polarity control in WSe2 double-gate transistors GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ... Scientific reports 6 (1), 29448, 2016 | 97 | 2016 |
| Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 96 | 2017 |
| Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S B Groven, M Heyne, A Nalin Mehta, H Bender, T Nuytten, J Meersschaut, ... Chemistry of Materials 29 (7), 2927-2938, 2017 | 96 | 2017 |
| Future Logic Scaling: Towards Atomic Channels and Deconstructed Chips SB Samavedam, J Ryckaert, E Beyne, K Ronse, N Horiguchi, Z Tokei, ... 2020 IEEE International Electron Devices Meeting (IEDM), 1.1. 1-1.1. 10, 2020 | 93 | 2020 |
| Investigation of Microwave Loss Induced by Oxide Regrowth in High-Q Niobium Resonators J Verjauw, A Potočnik, M Mongillo, R Acharya, F Mohiyaddin, G Simion, ... Physical Review Applied 16 (1), 014018, 2021 | 91 | 2021 |
| Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ... Advanced Functional Materials 25 (5), 679-686, 2015 | 91 | 2015 |
Bogdan GovoreanuPrincipal Member of Technical Staff, imecVerified email at imec.be