| IEEE Int. Electron Devices Meet B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... Tech. Dig 729, 2011 | 1019* | 2011 |
| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 920 | 2011 |
| 10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 292 | 2013 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 262 | 2013 |
| Two-dimensional materials prospects for non-volatile spintronic memories H Yang, SO Valenzuela, M Chshiev, S Couet, B Dieny, B Dlubak, A Fert, ... Nature 606 (7915), 663-673, 2022 | 246 | 2022 |
| Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions E Grimaldi, V Krizakova, G Sala, F Yasin, S Couet, GS Kar, K Garello, ... Nature Nanotechnology 15 (2), 111-117, 2020 | 239 | 2020 |
| Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 221 | 2012 |
| SOT-MRAM 300mm integration for low power and ultrafast embedded memories K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ... 2018 IEEE Symposium on VLSI Circuits, 81-82, 2018 | 177 | 2018 |
| Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ... 2019 Symposium on VLSI Circuits, T194-T195, 2019 | 166 | 2019 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 119 | 2012 |
| International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... IEEE, Washington, DC, 402, 2011 | 118 | 2011 |
| Kinetic evolution and equilibrium morphology of strained islands A Rastelli, M Stoffel, J Tersoff, GS Kar, OG Schmidt Physical review letters 95 (2), 026103, 2005 | 116 | 2005 |
| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 114 | 2020 |
| Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... 2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012 | 110 | 2012 |
| Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ... 2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012 | 96 | 2012 |
| Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ... 2012 4th IEEE International Memory Workshop, 1-4, 2012 | 90 | 2012 |
| Analysis of complementary RRAM switching DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ... IEEE Electron Device Letters 33 (8), 1186-1188, 2012 | 77 | 2012 |
| Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ... Applied physics letters 84 (8), 1386-1388, 2004 | 77 | 2004 |
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