| Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 2016 | 105 | 2016 |
| Auger recombination in AlGaN quantum wells for UV light-emitting diodes F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ... Applied Physics Letters 113 (7), 2018 | 73 | 2018 |
| Germanium–the superior dopant in n‐type GaN C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ... physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015 | 57 | 2015 |
| Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ... Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016 | 48 | 2016 |
| A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser F Hjort, J Enslin, M Cobet, MA Bergmann, J Gustavsson, T Kolbe, ... ACS photonics 8 (1), 135-141, 2020 | 31 | 2020 |
| Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements I Reklaitis, F Nippert, R Kudžma, T Malinauskas, S Karpov, I Pietzonka, ... Journal of Applied Physics 121 (3), 2017 | 29 | 2017 |
| Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots G Callsen, GMO Pahn, S Kalinowski, C Kindel, J Settke, J Brunnmeier, ... Physical Review B 92 (23), 235439, 2015 | 28 | 2015 |
| Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements G Callsen, MR Wagner, JS Reparaz, F Nippert, T Kure, S Kalinowski, ... Physical Review B 90 (20), 205206, 2014 | 28 | 2014 |
| Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues C Frankerl, MP Hoffmann, F Nippert, H Wang, C Brandl, N Tillner, ... Journal of Applied Physics 126 (7), 2019 | 27 | 2019 |
| Tackling Disorder in γ‐Ga2O3 LE Ratcliff, T Oshima, F Nippert, BM Janzen, E Kluth, R Goldhahn, ... Advanced Materials 34 (37), 2204217, 2022 | 26 | 2022 |
| Growth and structure of In0. 5Ga0. 5Sb quantum dots on GaP (001) EM Sala, G Stracke, S Selve, T Niermann, M Lehmann, S Schlichting, ... Applied Physics Letters 109 (10), 2016 | 21 | 2016 |
| Effect of gap modes on graphene and multilayer graphene in tip‐enhanced Raman spectroscopy E Poliani, F Nippert, J Maultzsch physica status solidi (b) 249 (12), 2511-2514, 2012 | 18 | 2012 |
| Point defect‐induced UV‐C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal‐organic chemical vapor deposition N Tillner, C Frankerl, F Nippert, MJ Davies, C Brandl, R Lösing, M Mandl, ... physica status solidi (b) 257 (12), 2000278, 2020 | 17 | 2020 |
| Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates C Frankerl, F Nippert, MP Hoffmann, H Wang, C Brandl, HJ Lugauer, ... Journal of Applied Physics 127 (9), 2020 | 17 | 2020 |
| Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop C Frankerl, F Nippert, A Gomez-Iglesias, MP Hoffmann, C Brandl, ... Applied Physics Letters 117 (10), 2020 | 13 | 2020 |
| Recombination dynamics in InxGa1− xN quantum wells—Contribution of excited subband recombination to carrier leakage T Schulz, A Nirschl, P Drechsel, F Nippert, T Markurt, M Albrecht, ... Applied Physics Letters 105 (18), 2014 | 13 | 2014 |
| Green (In, Ga, Al) P-GaP light-emitting diodes grown on high-index GaAs surfaces NN Ledentsov, VA Shchukin, J Lyytikäinen, O Okhotnikov, ... Applied Physics Letters 105 (18), 2014 | 12 | 2014 |
| Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells F Nippert, A Nirschl, T Schulz, G Callsen, I Pietzonka, S Westerkamp, ... Journal of Applied Physics 119 (21), 2016 | 11 | 2016 |
| Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy S Freytag, M Feneberg, C Berger, J Bläsing, A Dadgar, G Callsen, ... Journal of Applied Physics 120 (1), 2016 | 9 | 2016 |
| Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization C Frankerl, F Nippert, MP Hoffmann, C Brandl, HJ Lugauer, R Zeisel, ... physica status solidi (b) 257 (12), 2000242, 2020 | 8 | 2020 |
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinVerified email at tu-berlin.de
