Carbon nanomaterials for next-generation interconnects and passives: physics, status, and prospects H Li, C Xu, N Srivastava, K Banerjee IEEE transactions on electron devices 56 (9), 1799-1821, 2009 | 548 | 2009 |
Modeling, analysis, and design of graphene nano-ribbon interconnects C Xu, H Li, K Banerjee IEEE transactions on electron devices 56 (8), 1567-1578, 2009 | 458 | 2009 |
Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition W Liu, H Li, C Xu, Y Khatami, K Banerjee Carbon 49 (13), 4122-4130, 2011 | 423 | 2011 |
Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs C Xu, H Li, R Suaya, K Banerjee Electron Devices, IEEE Transactions on 57 (12), 3405-3417, 2010 | 309 | 2010 |
Carbon nanomaterials: The ideal interconnect technology for next-generation ICs H Li, C Xu, K Banerjee Design & Test of Computers, IEEE 27 (4), 20-31, 2010 | 123 | 2010 |
High-frequency behavior of graphene-based interconnects—Part I: Impedance modeling D Sarkar, C Xu, H Li, K Banerjee IEEE Transactions on Electron Devices 58 (3), 843-852, 2011 | 88 | 2011 |
Metal-to-multilayer-graphene contact—Part I: Contact resistance modeling Y Khatami, H Li, C Xu, K Banerjee IEEE Transactions on Electron Devices 59 (9), 2444-2452, 2012 | 78 | 2012 |
Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability C Xu, SK Kolluri, K Endo, K Banerjee IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2013 | 77 | 2013 |
Graphene nano-ribbon (GNR) interconnects: A genuine contender or a delusive dream? C Xu, H Li, K Banerjee 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 75 | 2008 |
High-frequency behavior of graphene-based interconnects—Part II: Impedance analysis and implications for inductor design D Sarkar, C Xu, H Li, K Banerjee IEEE Transactions on Electron Devices 58 (3), 853-859, 2011 | 69 | 2011 |
Compact AC modeling and analysis of Cu, W, and CNT based through-silicon vias (TSVs) in 3-D ICs C Xu, H Li, R Suaya, K Banerjee 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 65 | 2009 |
The leakage current of the Schottky contact on the mesa edge of AlGaN/GaN heterostructure C Xu, J Wang, H Chen, F Xu, Z Dong, Y Hao, CP Wen IEEE Electron Device Letters 28 (11), 942-944, 2007 | 49 | 2007 |
Compact modeling and analysis of through-Si-via-induced electrical noise coupling in three-dimensional ICs C Xu, R Suaya, K Banerjee IEEE Transactions on Electron Devices 58 (11), 4024-4034, 2011 | 41 | 2011 |
Metal-to-multilayer-graphene contact—Part II: Analysis of contact resistance Y Khatami, H Li, C Xu, K Banerjee IEEE Transactions on Electron Devices 59 (9), 2453-2460, 2012 | 38 | 2012 |
A fully analytical model for the series impedance of through-silicon vias with consideration of substrate effects and coupling with horizontal interconnects C Xu, V Kourkoulos, R Suaya, K Banerjee IEEE Transactions on Electron Devices 58 (10), 3529-3540, 2011 | 34 | 2011 |
Reeves’s circular transmission line model and its scope of application to extract specific contact resistance C Xu, J Wang, M Wang, H Jin, Y Hao, CP Wen Solid-state electronics 50 (5), 843-847, 2006 | 32 | 2006 |
Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies C Xu, L Jiang, SK Kolluri, BJ Rubin, A Deutsch, H Smith, K Banerjee Proceedings of the 2009 International Conference on Computer-Aided Design …, 2009 | 30 | 2009 |
Graphene based heterostructure tunnel-FETs for low-voltage/high-performance ICs Y Khatami, M Krall, H Li, C Xu, K Banerjee 68th Device Research Conference, 65-66, 2010 | 18 | 2010 |
Compact modeling and analysis of coupling noise induced by through-Si-vias in 3-D ICs C Xu, R Suaya, K Banerjee 2010 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2010 | 16 | 2010 |
A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures L Jiang, C Xu, BJ Rubin, AJ Weger, A Deutsch, H Smith, A Caron, ... IEEE Transactions on Advanced Packaging 33 (4), 777-786, 2010 | 16 | 2010 |