| Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics T Georgiou, R Jalil, BD Belle, L Britnell, RV Gorbachev, SV Morozov, ... Nature nanotechnology 8 (2), 100-103, 2013 | 1929 | 2013 |
| Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement GW Mudd, SA Svatek, T Ren, A Patanè, O Makarovsky, L Eaves, ... Advanced Materials (Deerfield Beach, Fla.) 25 (40), 5714, 2013 | 661 | 2013 |
| Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures A Mishchenko, JS Tu, Y Cao, RV Gorbachev, JR Wallbank, ... Nature nanotechnology 9 (10), 808-813, 2014 | 511 | 2014 |
| High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures GW Mudd, SA Svatek, L Hague, O Makarovsky, ZR Kudrynskyi, CJ Mellor, ... Advanced Materials (Deerfield Beach, Fla.) 27 (25), 3760, 2015 | 389 | 2015 |
| The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals GW Mudd, MR Molas, X Chen, V Zólyomi, K Nogajewski, ZR Kudrynskyi, ... Scientific Reports 6 (1), 39619, 2016 | 217 | 2016 |
| Universal mobility characteristics of graphene originating from charge scattering by ionised impurities JH Gosling, O Makarovsky, F Wang, ND Cottam, MT Greenaway, ... Communications Physics 4 (1), 30, 2021 | 129 | 2021 |
| Phonon-assisted resonant tunneling of electrons in graphene–boron nitride transistors EE Vdovin, A Mishchenko, MT Greenaway, MJ Zhu, D Ghazaryan, A Misra, ... Physical review letters 116 (18), 186603, 2016 | 113 | 2016 |
| Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport N Balakrishnan, CR Staddon, EF Smith, J Stec, D Gay, GW Mudd, ... 2D Materials 3 (2), 025030, 2016 | 105 | 2016 |
| Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation N Balakrishnan, ZR Kudrynskyi, EF Smith, MW Fay, O Makarovsky, ... 2D Materials 4 (2), 025043, 2017 | 98 | 2017 |
| Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions N Balakrishnan, ZR Kudrynskyi, MW Fay, GW Mudd, SA Svatek, ... Advanced Optical Materials 2 (11), 1064-1069, 2014 | 95 | 2014 |
| Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor NV Kozlova, N Mori, O Makarovsky, L Eaves, QD Zhuang, A Krier, ... Nature communications 3 (1), 1097, 2012 | 94 | 2012 |
| Resonant tunnelling between the chiral Landau states of twisted graphene lattices MT Greenaway, EE Vdovin, A Mishchenko, O Makarovsky, A Patanè, ... Nature Physics 11 (12), 1057-1062, 2015 | 92 | 2015 |
| Ligand-induced control of photoconductive gain and doping in a hybrid graphene-quantum dot transistor L Turyanska, O Makarovsky, SA Svatek, PH Beton, CJ Mellor, A Patanè, ... Advanced Electronic Materials 1 (7), 2015 | 81 | 2015 |
| Quantum confined acceptors and donors in InSe nanosheets GW Mudd, A Patanè, ZR Kudrynskyi, MW Fay, O Makarovsky, L Eaves, ... Applied Physics Letters 105 (22), 2014 | 79 | 2014 |
| Comment on“AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy”[Appl. Phys. Lett. 81, 1729(2002)] AE Belyaev, CT Foxon, SV Novikov, O Makarovsky, L Eaves, MJ Kappers, ... Applied physics letters 83 (17), 3626, 2003 | 61 | 2003 |
| Giant quantum hall plateau in graphene coupled to an InSe van der Waals crystal ZR Kudrynskyi, MA Bhuiyan, O Makarovsky, JDG Greener, EE Vdovin, ... Physical Review Letters 119 (15), 157701, 2017 | 55 | 2017 |
| Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures CT Foxon, SV Novikov, AE Belyaev, LX Zhao, O Makarovsky, DJ Walker, ... physica status solidi (c), 2389-2392, 2003 | 52 | 2003 |
| Tunnel spectroscopy of localised electronic states in hexagonal boron nitride MT Greenaway, EE Vdovin, D Ghazaryan, A Misra, A Mishchenko, Y Cao, ... Communications physics 1 (1), 94, 2018 | 51 | 2018 |
| Inter‐flake quantum transport of electrons and holes in inkjet‐printed graphene devices F Wang, JH Gosling, GF Trindade, GA Rance, O Makarovsky, ND Cottam, ... Advanced Functional Materials 31 (5), 2007478, 2021 | 49 | 2021 |
| Spin flop and crystalline anisotropic magnetoresistance in CuMnAs M Wang, C Andrews, S Reimers, OJ Amin, P Wadley, RP Campion, ... Physical Review B 101 (9), 094429, 2020 | 49 | 2020 |