| Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ... Applied Physics Letters 111 (9), 2017 | 206 | 2017 |
| 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 2015 | 94 | 2015 |
| Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy, J Rothman, D Rouchon, ... Applied Physics Letters 110 (11), 2017 | 86 | 2017 |
| Germanium based photonic components toward a full silicon/germanium photonic platform V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ... Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017 | 85 | 2017 |
| Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS photonics 3 (10), 1907-1911, 2016 | 71 | 2016 |
| Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of AS Ngankeu, SK Mahatha, K Guilloy, M Bianchi, CE Sanders, K Hanff, ... Physical Review B 96 (19), 195147, 2017 | 58 | 2017 |
| Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ... Journal of Applied Physics 121 (5), 2017 | 55 | 2017 |
| Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 2016 | 52 | 2016 |
| Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo Nano Letters 15 (4), 2429-2433, 2015 | 50 | 2015 |
| Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content A Gassenq, L Milord, J Aubin, K Guilloy, S Tardif, N Pauc, J Rothman, ... Applied Physics Letters 109 (24), 2016 | 38 | 2016 |
| Spin-dependent electron-phonon coupling in the valence band of single-layer NF Hinsche, AS Ngankeu, K Guilloy, SK Mahatha, A Grubišić Čabo, ... Physical Review B 96 (12), 121402, 2017 | 30 | 2017 |
| Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering S Tardif, A Gassenq, K Guilloy, N Pauc, G Osvaldo Dias, JM Hartmann, ... Journal of Applied Crystallography 49 (5), 1402-1411, 2016 | 24 | 2016 |
| Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers V Reboud, A Gassenq, K Guilloy, GO Dias, JM Escalante, S Tardif, ... Silicon Photonics XI 9752, 73-80, 2016 | 24 | 2016 |
| Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications V Reboud, J Widiez, JM Hartmann, GO Dias, D Fowler, A Chelnokov, ... Silicon Photonics X 9367, 231-236, 2015 | 22 | 2015 |
| Study of the light emission in Ge layers and strained membranes on Si substrates A Gassenq, K Guilloy, N Pauc, JM Hartmann, GO Dias, D Rouchon, ... Thin Solid Films 613, 64-67, 2016 | 21 | 2016 |
| Uniaxially stressed germanium with fundamental direct band gap R Geiger, T Zabel, E Marin, A Gassenq, JM Hartmann, J Widiez, ... arXiv preprint arXiv:1603.03454, 2015 | 21 | 2015 |
| Electron–phonon coupling in single-layer MoS2 SK Mahatha, AS Ngankeu, NF Hinsche, I Mertig, K Guilloy, PL Matzen, ... Surface Science 681, 64-69, 2019 | 11 | 2019 |
| Inductively coupled plasma etching of germanium tin for the fabrication of photonic components L Milord, J Aubin, A Gassenq, S Tardif, K Guilloy, N Pauc, J Rothman, ... Silicon Photonics XII 10108, 53-59, 2017 | 9 | 2017 |
| Quantification of dopants in nanomaterial by SEM/EDS E Robin, N Mollard, K Guilloy, N Pauc, P Gentile, Z Fang, B Daudin, ... European Microscopy Congress 2016: Proceedings, 380-381, 2016 | 8 | 2016 |
| High aspect ratio germanium nanowires obtained by dry etching K Guilloy, N Pauc, A Gassenq, V Calvo MRS Advances 1, 875-880, 2016 | 7 | 2016 |
Samuel TardifIRIG, CEA-GrenobleVerified email at cea.fr