| Tunable infrared plasmonic devices using graphene/insulator stacks H Yan, X Li, B Chandra, G Tulevski, Y Wu, M Freitag, W Zhu, P Avouris, ... Nature nanotechnology 7 (5), 330-334, 2012 | 1358 | 2012 |
| Damping pathways of mid-infrared plasmons in graphene nanostructures H Yan, T Low, W Zhu, Y Wu, M Freitag, X Li, F Guinea, P Avouris, F Xia Nature Photonics 7 (5), 394-399, 2013 | 1014 | 2013 |
| Structure and electronic transport in graphene wrinkles W Zhu, T Low, V Perebeinos, AA Bol, Y Zhu, H Yan, J Tersoff, P Avouris Nano letters 12 (7), 3431-3436, 2012 | 692 | 2012 |
| Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene W Zhu, V Perebeinos, M Freitag, P Avouris Physical Review B—Condensed Matter and Materials Physics 80 (23), 235402, 2009 | 610 | 2009 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 590 | 2021 |
| State-of-the-art graphene high-frequency electronics Y Wu, KA Jenkins, A Valdes-Garcia, DB Farmer, Y Zhu, AA Bol, ... Nano letters 12 (6), 3062-3067, 2012 | 562 | 2012 |
| Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition W Zhu, T Low, YH Lee, H Wang, DB Farmer, J Kong, F Xia, P Avouris Nature communications 5 (1), 3087, 2014 | 506 | 2014 |
| Current transport in metal/hafnium oxide/silicon structure WJ Zhu, TP Ma, T Tamagawa, J Kim, Y Di IEEE Electron Device Letters 23 (2), 97-99, 2002 | 424 | 2002 |
| Photocurrent in graphene harnessed by tunable intrinsic plasmons M Freitag, T Low, W Zhu, H Yan, F Xia, P Avouris Nature communications 4 (1), 1951, 2013 | 380 | 2013 |
| Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics WJ Zhu, T Tamagawa, M Gibson, T Furukawa, TP Ma IEEE Electron Device Letters 23 (11), 649-651, 2002 | 349 | 2002 |
| Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics W Zhu, JP Han, TP Ma IEEE Transactions on Electron Devices 51 (1), 98-105, 2004 | 307 | 2004 |
| Infrared spectroscopy of tunable Dirac terahertz magneto-plasmons in graphene H Yan, Z Li, X Li, W Zhu, P Avouris, F Xia Nano letters 12 (7), 3766-3771, 2012 | 284 | 2012 |
| Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers Y Li, H Yan, DB Farmer, X Meng, W Zhu, RM Osgood, TF Heinz, P Avouris Nano letters 14 (3), 1573-1577, 2014 | 261 | 2014 |
| Infrared spectroscopy of wafer-scale graphene H Yan, F Xia, W Zhu, M Freitag, C Dimitrakopoulos, AA Bol, G Tulevski, ... ACS nano 5 (12), 9854-9860, 2011 | 243 | 2011 |
| Charge trapping in ultrathin hafnium oxide WJ Zhu, TP Ma, S Zafar, T Tamagawa IEEE Electron Device Letters 23 (10), 597-599, 2002 | 210 | 2002 |
| Three-terminal graphene negative differential resistance devices Y Wu, DB Farmer, W Zhu, SJ Han, CD Dimitrakopoulos, AA Bol, P Avouris, ... ACS nano 6 (3), 2610-2616, 2012 | 199 | 2012 |
| Silicon nitride gate dielectrics and band gap engineering in graphene layers W Zhu, D Neumayer, V Perebeinos, P Avouris Nano letters 10 (9), 3572-3576, 2010 | 195 | 2010 |
| Ferroelectric tunneling junctions based on aluminum oxide/zirconium-doped hafnium oxide for neuromorphic computing H Ryu, H Wu, F Rao, W Zhu Scientific reports 9 (1), 20383, 2019 | 182 | 2019 |
| HfO/sub 2/and HfAlO for CMOS: thermal stability and current transport W Zhu, TP Ma, T Tamagawa, Y Di, J Kim, R Carruthers, M Gibson, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 163 | 2001 |
| Temperature dependence of channel mobility in HfO/sub 2/-gated NMOSFETs WJ Zhu, TP Ma IEEE Electron Device Letters 25 (2), 89-91, 2004 | 134 | 2004 |
