| A new approach to high‐efficiency multi‐band‐gap solar cells KWJ Barnham, G Duggan Journal of Applied Physics 67 (7), 3490-3493, 1990 | 709 | 1990 |
| Unambiguous observation of the 2 s state of the light-and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures P Dawson, KJ Moore, G Duggan, HI Ralph, CTB Foxon Physical Review B 34 (8), 6007, 1986 | 187 | 1986 |
| Short-period GaAs-AlAs superlattices: Optical properties and electronic structure KJ Moore, G Duggan, P Dawson, CT Foxon Physical Review B 38 (8), 5535, 1988 | 152 | 1988 |
| Observations and calculations of the exciton binding energy in (In, Ga) As/GaAs strained-quantum-well heterostructures KJ Moore, G Duggan, K Woodbridge, C Roberts Physical Review B 41 (2), 1090, 1990 | 138 | 1990 |
| A critical review of heterojunction band offsets G Duggan Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 134 | 1985 |
| Envelope-function matching conditions for GaAs/(Al, Ga) As heterojunctions I Galbraith, G Duggan Physical Review B 38 (14), 10057, 1988 | 127 | 1988 |
| Free excitons in room-temperature photoluminescence of GaAs-Al x Ga 1− x As multiple quantum wells P Dawson, G Duggan, HI Ralph, K Woodbridge Physical Review B 28 (12), 7381, 1983 | 91 | 1983 |
| Exciton binding energy and external-field-induced blue shift in double quantum wells I Galbraith, G Duggan Physical Review B 40 (8), 5515, 1989 | 83 | 1989 |
| Theory of heavy-hole magnetoexcitons in GaAs-(Al, Ga) As quantum-well heterostructures G Duggan Physical Review B 37 (5), 2759, 1988 | 79 | 1988 |
| Exciton localization effects and heterojunction band offset in (Ga, In) P-(Al, Ga, In) P multiple quantum wells MD Dawson, G Duggan Physical Review B 47 (19), 12598, 1993 | 78 | 1993 |
| Γ-X mixing in the miniband structure of a GaAs/AlAs superlattice NJ Pulsford, RJ Nicholas, P Dawson, KJ Moore, G Duggan, CTB Foxon Physical review letters 63 (20), 2284, 1989 | 77 | 1989 |
| Reappraisal of the band-edge discontinuities at the Al x Ga 1− x As-GaAs heterojunction G Duggan, HI Ralph, KJ Moore Physical Review B 32 (12), 8395, 1985 | 68 | 1985 |
| Exciton binding energy in type-ii gaas-(al, ga) as quantum-well heterostructures G Duggan, HI Ralph Physical Review B 35 (8), 4152, 1987 | 61 | 1987 |
| Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach MF Pereira Jr, I Galbraith, SW Koch, G Duggan Physical Review B 42 (11), 7084, 1990 | 56 | 1990 |
| Positions of the sub-band minima in GaAs(AlGa) As quantum well heterostructures P Dawson, G Duggan, HI Ralph, K Woodbridge, GW t'Hooft Superlattices and Microstructures 1 (3), 231-235, 1985 | 49 | 1985 |
| Experimental confirmation of a sum rule for room‐temperature electroabsorption in GaAs‐AlGaAs multiple quantum well structures M Whitehead, G Parry, K Woodbridge, PJ Dobson, G Duggan Applied physics letters 52 (5), 345-347, 1988 | 46 | 1988 |
| A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy GB Scott, G Duggan, P Dawson, G Weimann Journal of Applied Physics 52 (11), 6888-6894, 1981 | 46 | 1981 |
| The efficiency of photoluminescence of thin epitaxial semiconductors G Duggan, GB Scott Journal of Applied Physics 52 (1), 407-411, 1981 | 46 | 1981 |
| Miniband dispersion in (In, Ga) As-GaAs strained-layer superlattices KJ Moore, G Duggan, A Raukema, K Woodbridge Physical Review B 42 (2), 1326, 1990 | 44 | 1990 |
| III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials G Duggan US Patent 6,072,189, 2000 | 42 | 2000 |