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Xu Wu
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Epitaxial Growth and Air‐Stability of Monolayer Antimonene on PdTe2
X Wu, Y Shao, H Liu, Z Feng, YL Wang, JT Sun, C Liu, JO Wang, ZL Liu, ...
Advanced Materials 29 (11), 1605407, 2017
3892017
Epitaxial growth of flat antimonene monolayer: a new honeycomb analogue of graphene
Y Shao, ZL Liu, C Cheng, X Wu, H Liu, C Liu, JO Wang, SY Zhu, YQ Wang, ...
Nano letters 18 (3), 2133-2139, 2018
2552018
Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters
X Lin, JC Lu, Y Shao, YY Zhang, X Wu, JB Pan, L Gao, SY Zhu, K Qian, ...
Nature materials 16 (7), 717-721, 2017
2142017
Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges
ZL Liu, X Wu, Y Shao, J Qi, Y Cao, L Huang, C Liu, JO Wang, Q Zheng, ...
Science bulletin 63 (7), 419-425, 2018
1102018
Imaging single glycans
X Wu, M Delbianco, K Anggara, T Michnowicz, A Pardo-Vargas, ...
Nature 582 (7812), 375-378, 2020
1032020
Kondo effect of cobalt adatoms on a graphene monolayer controlled by substrate-induced ripples
J Ren, H Guo, J Pan, YY Zhang, X Wu, HG Luo, S Du, ST Pantelides, ...
Nano letters 14 (7), 4011-4015, 2014
882014
Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2
L Liu, H Yang, Y Huang, X Song, Q Zhang, Z Huang, Y Hou, Y Chen, Z Xu, ...
Nature communications 12 (1), 1978, 2021
662021
Spontaneous Formation of 1D Pattern in Monolayer VSe2 with Dispersive Adsorption of Pt Atoms for HER Catalysis
ZL Liu, B Lei, ZL Zhu, L Tao, J Qi, DL Bao, X Wu, L Huang, YY Zhang, ...
Nano Letters 19 (8), 4897-4903, 2019
452019
Direct observation of glycans bonded to proteins and lipids at the single-molecule level
K Anggara, L Sršan, T Jaroentomeechai, X Wu, S Rauschenbach, ...
Science 382 (6667), 219-223, 2023
382023
Spontaneous formation of a superconductor-topological insulator-normal metal layered heterostructure
YQ Wang, X Wu, YL Wang, Y Shao, T Lei, JO Wang, SY Zhu, H Guo, ...
arXiv preprint arXiv:2004.02742, 2020
352020
Epitaxial fabrication of two-dimensional NiSe2 on Ni (111) substrate
Y Shao, S Song, X Wu, J Qi, H Lu, C Liu, S Zhu, Z Liu, J Wang, D Shi, ...
Applied Physics Letters 111 (11), 2017
332017
Interatomic spin coupling in manganese clusters registered on graphene
J Ren, H Guo, J Pan, YF Zhang, Y Yang, X Wu, S Du, M Ouyang, HJ Gao
Physical Review Letters 119 (17), 176806, 2017
262017
Line defects in monolayer TiSe2 with adsorption of Pt atoms potentially enable excellent catalytic activity
Z Song, J Yi, J Qi, Q Zheng, Z Zhu, L Tao, Y Cao, Y Li, Z Gao, R Zhang, ...
Nano Research 15 (5), 4687-4692, 2022
222022
Visualization of Charge-Density-Wave Reconstruction and Electronic Superstructure at the Edge of Correlated Insulator 1T-NbSe2
H Yang, T Zhang, Z Huang, Y Chen, X Song, X Hao, H Yang, X Wu, ...
ACS nano 16 (1), 1332-1338, 2021
192021
Visualizing spatial evolution of electron-correlated interface in two-dimensional heterostructures
Q Zhang, Y Hou, T Zhang, Z Xu, Z Huang, P Yuan, L Jia, H Yang, ...
ACS nano 15 (10), 16589-16596, 2021
182021
Advance in two-dimensional twisted moiré materials: Fabrication, properties, and applications
H Yang, L Liu, H Yang, Y Zhang, X Wu, Y Huang, HJ Gao, Y Wang
Nano Research 16 (2), 2579-2596, 2023
162023
Electrochemically etched Ni tips in a constant-current mode for spin-polarized scanning tunneling microscopy
H Chen, W Xiao, X Wu, K Yang, HJ Gao
Journal of Vacuum Science & Technology B 32 (6), 2014
162014
Back contact modification of the optoelectronic device with transition metal dichalcogenide VSe2 film drives solar cell efficiency
Y Zeng, Z Shen, X Wu, DX Wang, YL Wang, YL Sun, L Wu, Y Zhang
Journal of Materiomics 7 (3), 470-477, 2021
142021
Permeation through graphene ripples
T Liang, G He, X Wu, J Ren, H Guo, Y Kong, H Iwai, D Fujita, H Gao, ...
2D Materials 4 (2), 025010, 2017
142017
Tunable Electronic Structures in Wrinkled 2D Transition‐Metal‐Trichalcogenide (TMT) HfTe3 Films
YQ Wang, X Wu, YF Ge, YL Wang, H Guo, Y Shao, T Lei, C Liu, JO Wang, ...
Advanced Electronic Materials 2 (12), 1600324, 2016
142016
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