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Geetanjali Vashisht
Geetanjali Vashisht
Scientific Officer
Verified email at rrcat.gov.in
Title
Cited by
Cited by
Year
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in AlxGa1−xAs/GaAs quantum wells by magneto-photoluminescence
S Haldar, VK Dixit, G Vashisht, SK Khamari, S Porwal, TK Sharma, ...
Scientific Reports 7 (1), 4905, 2017
282017
Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy
R Roychowdhury, VK Dixit, G Vashisht, TK Sharma, C Mukherjee, SK Rai, ...
Applied Surface Science 476, 615-622, 2019
162019
Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1− x/InP quantum well detectors
G Vashisht, VK Dixit, S Porwal, R Kumar, TK Sharma, SM Oak
Journal of Applied Physics 119 (9), 2016
122016
Effect of disorders on the optical properties of excitons in InAsP/InP quantum wells investigated by magneto-photoluminescence spectroscopy
G Vashisht, VK Dixit, S Haldar, TK Sharma
Journal of the Optical Society of America B 35 (10), 2405-2411, 2018
102018
Development of a simple cost-effective maskless-photolithography system
S Haldar, G Vashisht, UK Ghosh, AK Jaiswal, S Porwal, A Khakha, ...
AIP Conference Proceedings 2115 (1), 2019
92019
The effect of magnetic field on free and bound exciton luminescence in GaAs/AlGaAs multiple quantum well structures: a quantitative study on the estimation of ultra-low disorder
S Haldar, VK Dixit, G Vashisht, S Porwal, TK Sharma
Journal of Physics D: Applied Physics 50 (33), 335107, 2017
82017
Radiative and non-radiative recombination of thermally activated magneto-excitons probed via quasi-simultaneous photoluminescence and surface-photovoltage spectroscopy
S Haldar, VK Dixit, G Vashisht, S Porwal, TK Sharma
Journal of Applied Physics 124 (5), 2018
52018
A parallel magnetic field driven confinement versus separation of charges in GaAs quantum well investigated by magneto-photovoltage and magneto-photoluminescence spectroscopy
S Haldar, A Banerjee, G Vashisht, S Porwal, TK Sharma, VK Dixit
Journal of Luminescence 206, 342-347, 2019
32019
Development and application of InAsP/InP quantum well infrared detector
G Geetanjali, S Porwal, R Kumar, VK Dixit, TK Sharma, SM Oak
AIP Conference Proceedings 1731 (1), 2016
3*2016
Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs
G Vashisht, S Porwal, S Haldar, VK Dixit
Journal of Physics D: Applied Physics 55 (38), 385101, 2022
22022
Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001)
R Aggarwal, VK Dixit, AA Ingale, R Roychowdhury, G Vashisht, ...
Surfaces and Interfaces 44, 103720, 2024
12024
Electric and magnetic field effects on the exciton localization in a modulation doped InGaAs/GaAs quantum well
G Vashisht, S Haldar, S Porwal, R Kumar, VK Dixit
AIP Conference Proceedings 2265 (1), 2020
12020
Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations
S Haldar, G Vashisht, S Porwal, TK Sharma, VK Dixit
Journal of Applied Physics 125 (20), 2019
12019
Role of surface and interface states on the performance of GaAs based photodetectors
H Darji, G Vashisht, R Roychowdhury, S Haldar, SK Khamari, VK Dixit, ...
AIP Conference Proceedings 2100 (1), 2019
12019
Investigations on the Effect of Arsenic and Phosphorus Atomic Exchange on the Origin of Crystal Potential Fluctuations in Inasp/Inp Epilayers
G Vashisht, R Roychowdhury, P Rajput, R Kumar, A Trivedi, M Balal, ...
Inp Epilayers, 0
1
Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures
G Vashisht, R Roychowdhury, R Kumar, S Porwal, A Bose, TK Sharma, ...
Surfaces and Interfaces 53, 105087, 2024
2024
Anisotropic magnetic properties of excitons in GaAs multiple quantum wells
S Haldar, A Banerjee, K Kumar, R Kumar, G Vashisht, TK Sharma, ...
Superlattices and Microstructures 137, 106332, 2020
2020
Ultrafast Carrier Dynamics in Ingan Quantum Well Channel Based High Electron Mobility Transistor Structure
P Taya, S Khan, J Jayabalan, A Singh, VK Singh, G Vashisht, TK Sharma
Available at SSRN 4946797, 0
Investigations on InGaAs/GaAs quantum well based symmetric and asymmetric waveguide laser diode structures
G Vashisht, S Haldar, R Roychowdhury, S Porwal
Design and development of monocrystalline AlGaAs/GaAs DBR mirrors with reflectivity exceeding 99% at 1064, 1100 and 1550 nm photonic band
G Vashisht, S Pal, SK Khamari, R Kamparath, A Khakha, R Kumar, ...
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