| Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Applied Physics Express 11 (6), 064101, 2018 | 108 | 2018 |
| Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors S Rathkanthiwar, A Kalra, SV Solanke, N Mohta, R Muralidharan, ... Journal of Applied Physics 121 (16), 2017 | 99 | 2017 |
| Role of fuel and fuel-to-oxidizer ratio in combustion synthesis of nano-crystalline nickel oxide powders S Hadke, MT Kalimila, S Rathkanthiwar, S Gour, R Sonkusare, A Ballal Ceramics International 41 (10), 14949-14957, 2015 | 55 | 2015 |
| Polarization-graded AlGaN solar-blind pin detector with 92% zero-bias external quantum efficiency A Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath IEEE Photonics Technology Letters 31 (15), 1237-1240, 2019 | 53 | 2019 |
| Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes A Kalra, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Semiconductor Science and Technology 35 (3), 035001, 2020 | 27 | 2020 |
| Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates D Khachariya, S Mita, P Reddy, S Dangi, JH Dycus, P Bagheri, ... Applied Physics Letters 120 (17), 2022 | 24 | 2022 |
| Doping and compensation in heavily Mg doped Al-rich AlGaN films P Bagheri, A Klump, S Washiyama, M Hayden Breckenridge, JH Kim, ... Applied Physics Letters 120 (8), 2022 | 22 | 2022 |
| High electron mobility in AlN: Si by point and extended defect management P Bagheri, C Quiñones-Garcia, D Khachariya, S Rathkanthiwar, P Reddy, ... Journal of Applied Physics 132 (18), 2022 | 21 | 2022 |
| Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing D Khachariya, S Stein, W Mecouch, MH Breckenridge, S Rathkanthiwar, ... Applied Physics Express 15 (10), 101004, 2022 | 18 | 2022 |
| Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111) S Rathkanthiwar, A Kalra, N Remesh, A Bardhan, R Muralidharan, ... Journal of Applied Physics 127 (21), 2020 | 16 | 2020 |
| Integration of multi-layered materials with wide bandgap semiconductors for multi-spectral photodetectors: Case for MoS2/GaN and β-In2Se3/GaN SV Solanke, S Rathkanthiwar, A Kalra, RK Mech, M Rangarajan, ... Semiconductor Science and Technology 34 (7), 075020, 2019 | 16 | 2019 |
| Analysis of screw dislocation mediated dark current in Al0. 50Ga0. 50N solar-blind metal-semiconductor-metal photodetectors S Rathkanthiwar, A Kalra, R Muralidharan, DN Nath, S Raghavan Journal of Crystal Growth 498, 35-42, 2018 | 14 | 2018 |
| V-pits-induced photoresponse enhancement in AlGaN UV-B photodetectors on Si (111) S Rathkanthiwar, A Kalra, R Muralidharan, DN Nath, S Raghavan IEEE Transactions on Electron Devices 67 (10), 4281-4287, 2020 | 11 | 2020 |
| Pseudomorphic growth of thick Al0. 6Ga0. 4N epilayers on AlN substrates S Rathkanthiwar, J Houston Dycus, S Mita, R Kirste, J Tweedie, R Collazo, ... Applied Physics Letters 120 (20), 2022 | 10 | 2022 |
| Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, S Pavlidis, P Reddy, ... Applied Physics Express 15 (5), 051003, 2022 | 10 | 2022 |
| Demonstration of high-responsivity epitaxial A Kalra, S Vura, S Rathkanthiwar, R Muralidharan, S Raghavan, DN Nath Appl. Phys. Exp 11 (6), 2018 | 10 | 2018 |
| High p-conductivity in AlGaN enabled by polarization field engineering S Rathkanthiwar, P Reddy, B Moody, C Quiñones-García, P Bagheri, ... Applied Physics Letters 122 (15), 2023 | 9 | 2023 |
| On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters A Jadhav, P Bagheri, A Klump, D Khachariya, S Mita, P Reddy, ... Semiconductor Science and Technology 37 (1), 015003, 2021 | 9 | 2021 |
| Role of Surface Processes in Growth of Monolayer MoS2: Implications for Field-Effect Transistors VK Kumar, S Rathkanthiwar, A Rao, P Ghosh, S Dhar, H Chandrasekar, ... ACS Applied Nano Materials 4 (7), 6734-6744, 2021 | 9 | 2021 |
| High conductivity in Ge-doped AlN achieved by a non-equilibrium process P Bagheri, C Quiñones-Garcia, D Khachariya, J Loveless, Y Guan, ... Applied Physics Letters 122 (14), 2023 | 7 | 2023 |
Digbijoy NathAssociate Professor at Indian Institute of ScienceVerified email at iisc.ac.in