| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ... Nano letters 14 (5), 2401-2406, 2014 | 373 | 2014 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 262 | 2013 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 133 | 2015 |
| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 114 | 2020 |
| A Thermally Stable and High-Performance 90-nm-Based 1T1R CBRAM Cell A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ... IEEE transactions on electron devices 60 (11), 3690-3695, 2013 | 87 | 2013 |
| Understanding the dual nature of the filament dissolution in conductive bridging devices U Celano, L Goux, A Belmonte, K Opsomer, R Degraeve, C Detavernier, ... The journal of physical chemistry letters 6 (10), 1919-1924, 2015 | 68 | 2015 |
| Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories U Celano, G Giammaria, L Goux, A Belmonte, M Jurczak, W Vandervorst Nanoscale 8 (29), 13915-13923, 2016 | 55 | 2016 |
| Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021 | 53 | 2021 |
| Hourglass concept for RRAM: a dynamic and statistical device model R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ... Proceedings of the 21th International Symposium on the Physical and Failure …, 2014 | 53 | 2014 |
| RRAMs based on anionic and cationic switching: a short overview S Clima, K Sankaran, YY Chen, A Fantini, U Celano, A Belmonte, L Zhang, ... physica status solidi (RRL)–Rapid Research Letters 8 (6), 501-511, 2014 | 53 | 2014 |
| 90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation A Belmonte, W Kim, BT Chan, N Heylen, A Fantini, M Houssa, M Jurczak, ... 2013 5th IEEE International Memory Workshop, 26-29, 2013 | 48 | 2013 |
| First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices S Subhechha, N Rassoul, A Belmonte, R Delhougne, K Banerjee, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 45 | 2021 |
| Influence of carbon alloying on the thermal stability and resistive switching behavior of copper-telluride based CBRAM cells W Devulder, K Opsomer, F Seidel, A Belmonte, R Muller, B De Schutter, ... ACS applied materials & interfaces 5 (15), 6984-6989, 2013 | 45 | 2013 |
| A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From – , – , and – Measurements A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ... IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019 | 42 | 2019 |
| Tailoring switching and endurance / retention reliability characteristics of HfO2 / Hf RRAM with Ti, Al, Si dopants YY Chen, R Roelofs, A Redolfi, R Degraeve, D Crotti, A Fantini, S Clima, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 42 | 2014 |
| Conductive-AFM tomography for 3D filament observation in resistive switching devices U Celano, L Goux, A Belmonte, A Schulze, K Opsomer, C Detavernier, ... 2013 IEEE International Electron Devices Meeting, 21.6. 1-21.6. 4, 2013 | 41 | 2013 |
| Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability A Belmonte, R Degraeve, A Fantini, W Kim, M Houssa, M Jurczak, L Goux Applied Physics Letters 104 (23), 2014 | 38 | 2014 |
| Operating-current dependence of the Cu-mobility requirements in oxide-based conductive-bridge RAM A Belmonte, U Celano, R Degraeve, A Fantini, A Redolfi, W Vandervorst, ... IEEE Electron Device Letters 36 (8), 775-777, 2015 | 37 | 2015 |