| Low-power multiplexer designs using three-independent-gate field effect transistors E Giacomin, J Romero-Gonzalez, PE Gaillardon 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH …, 2017 | 20 | 2017 |
| Parasitic capacitance analysis of three-independent-gate field-effect transistors P Cadareanu, J Romero-Gonzalez, PE Gaillardon IEEE Journal of the Electron Devices Society 9, 400-408, 2021 | 18 | 2021 |
| BCB evaluation of high-performance and low-leakage three-independent-gate field-effect transistors J Romero-Gonzalez, PE Gaillardon IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018 | 17 | 2018 |
| An Efficient Adder Architecture with Three-Independent-Gate Field-Effect Transistors, J Romero-González, PE Gaillardon 2018 IEEE International Conference on Rebooting Computing (ICRC), 2018 | 11 | 2018 |
| Towards high-performance polarity-controllable FETs with 2D materials GV Resta, J Romero-Gonzalez, Y Balaji, T Agarwal, D Lin, F Catthor, ... Design, Automation & Test in Europe Conference & Exhibition (DATE), 2018 …, 2018 | 5 | 2018 |
| BCB Benchmarking for Three-Independent-Gate Field Transistors J Romero-Gonzalez, PE Gaillardon Functionality-Enhanced Devices: An alternative to Moore’s Law, 2018 | | 2018 |
| Three-Independent Gate FET’s Super Steep Subthreshold Slope J Romero-Gonzalez, PE Gaillardon Functionality-Enhanced Devices: An alternative to Moore’s Law, 2018 | | 2018 |
| BCB benchmarking for three-independent-gate field effect transistors J Romero-González, PE Gaillardon | | |
Pierre - Emmanuel GAILLARDONProfessor, University of UtahVerified email at utah.edu