| Silicene: compelling experimental evidence for graphenelike two-dimensional silicon P Vogt, P De Padova, C Quaresima, J Avila, E Frantzeskakis, MC Asensio, ... Physical review letters 108 (15), 155501, 2012 | 4230 | 2012 |
| Evidence of Dirac fermions in multilayer silicene P De Padova, P Vogt, A Resta, J Avila, I Razado-Colambo, C Quaresima, ... Applied Physics Letters 102 (16), 2013 | 228 | 2013 |
| Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ... Applied Physics Letters 97 (17), 2010 | 195 | 2010 |
| Atomic structures of silicene layers grown on Ag (111): scanning tunneling microscopy and noncontact atomic force microscopy observations A Resta, T Leoni, C Barth, A Ranguis, C Becker, T Bruhn, P Vogt, ... Scientific reports 3 (1), 2399, 2013 | 180 | 2013 |
| Synthesis and electrical conductivity of multilayer silicene P Vogt, P Capiod, M Berthe, A Resta, P De Padova, T Bruhn, G Le Lay, ... Applied physics letters 104 (2), 2014 | 179 | 2014 |
| Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP (001)(2× 4) WG Schmidt, N Esser, AM Frisch, P Vogt, J Bernholc, F Bechstedt, M Zorn, ... Physical Review B 61 (24), R16335, 2000 | 143 | 2000 |
| Various atomic structures of monolayer silicene fabricated on Ag (111) ZL Liu, MX Wang, JP Xu, JF Ge, G Le Lay, P Vogt, D Qian, CL Gao, C Liu, ... New Journal of Physics 16 (7), 075006, 2014 | 137 | 2014 |
| High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching M Martens, J Schlegel, P Vogt, F Brunner, R Lossy, J Würfl, M Weyers, ... Applied Physics Letters 98 (21), 2011 | 120 | 2011 |
| The quasiparticle band dispersion in epitaxial multilayer silicene P De Padova, J Avila, A Resta, I Razado-Colambo, C Quaresima, ... Journal of Physics: Condensed Matter 25 (38), 382202, 2013 | 104 | 2013 |
| Presence of gapped silicene-derived band in the prototypical (3× 3) silicene phase on silver (111) surfaces J Avila, P De Padova, S Cho, I Colambo, S Lorcy, C Quaresima, P Vogt, ... Journal of Physics: Condensed Matter 25 (26), 262001, 2013 | 95 | 2013 |
| InP(001)-() Surface: A Hydrogen Stabilized Structure WG Schmidt, PH Hahn, F Bechstedt, N Esser, P Vogt, A Wange, W Richter Physical review letters 90 (12), 126101, 2003 | 94 | 2003 |
| The metallic nature of epitaxial silicene monolayers on Ag (111) NW Johnson, P Vogt, A Resta, P De Padova, I Perez, D Muir, EZ Kurmaev, ... Advanced Functional Materials 24 (33), 5253-5259, 2014 | 93 | 2014 |
| Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector N Lobo, H Rodriguez, A Knauer, M Hoppe, S Einfeldt, P Vogt, M Weyers, ... Applied Physics Letters 96 (8), 2010 | 84 | 2010 |
| Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures P Vogt, A Mauze, F Wu, B Bonef, JS Speck Applied Physics Express 11 (11), 115503, 2018 | 83 | 2018 |
| Epitaxial silicene: can it be strongly strained? G Le Lay, P De Padova, A Resta, T Bruhn, P Vogt Journal of Physics D: Applied Physics 45 (39), 392001, 2012 | 79 | 2012 |
| Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen APL Materials 7 (2), 2019 | 76 | 2019 |
| Atomic surface structure of the phosphorous-terminated InP (001) grown by MOVPE P Vogt, T Hannappel, S Visbeck, K Knorr, N Esser, W Richter Physical Review B 60 (8), R5117, 1999 | 73 | 1999 |
| Near valence-band electronic properties of semiconducting (100) single crystals A Navarro-Quezada, S Alamé, N Esser, J Furthmüller, F Bechstedt, ... Physical Review B 92 (19), 195306, 2015 | 67 | 2015 |
| Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy A Navarro-Quezada, Z Galazka, S Alamé, D Skuridina, P Vogt, N Esser Applied Surface Science 349, 368-373, 2015 | 62 | 2015 |
| Influence of Polymorphism on the Electronic Structure of Ga2O3 JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ... Chemistry of Materials 32 (19), 8460-8470, 2020 | 61 | 2020 |
Guy Le LayAix-Marseille UniversityVerified email at univ-amu.fr