Articles with public access mandates - Sergiu ClimaLearn more
Not available anywhere: 5
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, G Donadio, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
Mandates: Research Foundation (Flanders)
Interpretation of the photoelectron spectra of FeS2-by a multiconfiguration computational approach
S Clima, MFA Hendrickx
The Journal of Physical Chemistry A 111 (43), 10988-10992, 2007
Mandates: Research Foundation (Flanders)
Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
S Clima, BJ O’Sullivan, N Ronchi, MG Bardon, K Banerjee, ...
2020 IEEE International Electron Devices Meeting (IEDM), 4.2. 1-4.2. 4, 2020
Mandates: Research Foundation (Flanders)
A HydroDynamic model for trap-assisted tunneling conduction in ovonic devices
F Buscemi, E Piccinini, L Vandelli, F Nardi, A Padovani, B Kaczer, ...
IEEE Transactions on Electron Devices 70 (4), 1808-1814, 2023
Mandates: European Commission
Microcanonical RT-TDDFT simulations of realistically extended devices
S Andermatt, MH Bani-Hashemian, F Ducry, S Brück, S Clima, G Pourtois, ...
The Journal of chemical physics 149 (12), 2018
Mandates: Swiss National Science Foundation, European Commission
Available somewhere: 23
Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ...
physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020
Mandates: European Commission
Embedding fragment ab initio model potentials in CASSCF/CASPT2 calculations of doped solids: Implementation and applications
B Swerts, LF Chibotaru, R Lindh, L Seijo, Z Barandiaran, S Clima, ...
Journal of Chemical Theory and Computation 4 (4), 586-594, 2008
Mandates: Research Foundation (Flanders)
Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019
Mandates: UK Engineering and Physical Sciences Research Council
Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
IEEE Electron Device Letters 40 (8), 1269-1272, 2019
Mandates: UK Engineering and Physical Sciences Research Council
Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors
Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ...
2019 Symposium on VLSI Technology, T238-T239, 2019
Mandates: UK Engineering and Physical Sciences Research Council
First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2
MNK Alam, S Clima, BJ O'sullivan, B Kaczer, G Pourtois, M Heyns, ...
Journal of Applied Physics 129 (8), 2021
Mandates: European Commission
GeSe-based ovonic threshold switching volatile true random number generator
Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ...
IEEE Electron Device Letters 41 (2), 228-231, 2019
Mandates: UK Engineering and Physical Sciences Research Council
Polarity-dependent threshold voltage shift in ovonic threshold switches: challenges and opportunities
T Ravsher, R Degraeve, D Garbin, A Fantini, S Clima, GL Donadio, ...
2021 IEEE International Electron Devices Meeting (IEDM), 28.4. 1-28.4. 4, 2021
Mandates: Research Foundation (Flanders)
Self-rectifying memory cell based on SiGeAsSe ovonic threshold switch
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, GL Donadio, ...
IEEE Transactions on Electron Devices 70 (5), 2276-2281, 2023
Mandates: Research Foundation (Flanders)
Cycling induced metastable degradation in GeSe Ovonic threshold switching selector
Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ...
IEEE Electron Device Letters 42 (10), 1448-1451, 2021
Mandates: National Natural Science Foundation of China, UK Engineering and Physical …
Ovonic threshold switch chalcogenides: connecting the first-principles electronic structure to selector device parameters
S Clima, T Ravsher, D Garbin, R Degraeve, A Fantini, R Delhougne, ...
ACS Applied Electronic Materials 5 (1), 461-469, 2022
Mandates: Research Foundation (Flanders)
Alternative high-k dielectrics for semiconductor applications
S Van Elshocht, C Adelmann, S Clima, G Pourtois, T Conard, A Delabie, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Mandates: Research Foundation (Flanders)
Impact of relaxation on the performance of GeSe true random number generator based on ovonic threshold switching
X Zhou, Z Hu, Z Chai, W Zhang, S Clima, R Degraeve, JF Zhang, A Fantini, ...
IEEE Electron Device Letters 43 (7), 1061-1064, 2022
Mandates: National Natural Science Foundation of China, UK Engineering and Physical …
Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition
T Ravsher, D Garbin, A Fantini, R Degraeve, S Clima, GL Donadio, ...
physica status solidi (RRL)–Rapid Research Letters 17 (8), 2200417, 2023
Mandates: Research Foundation (Flanders)
Device‐to‐materials pathway for electron traps detection in amorphous GeSe‐based selectors
A Slassi, LS Medondjio, A Padovani, F Tavanti, X He, S Clima, D Garbin, ...
Advanced Electronic Materials 9 (4), 2201224, 2023
Mandates: European Commission, Government of Spain
Publication and funding information is determined automatically by a computer program