| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ... Microelectronic engineering 86 (7-9), 1789-1795, 2009 | 309 | 2009 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 292 | 2013 |
| Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight S Clima, DJ Wouters, C Adelmann, T Schenk, U Schroeder, M Jurczak, ... Applied Physics Letters 104 (9), 2014 | 235 | 2014 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 133 | 2015 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 119 | 2012 |
| International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... IEEE, Washington, DC, 402, 2011 | 118 | 2011 |
| Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... 2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012 | 110 | 2012 |
| Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ... 2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013 | 105 | 2013 |
| Heterospin Systems Constructed from [Cu2Ln]3+ and [Ni(mnt)2]1-,2- Tectons: First 3p−3d−4f Complexes (mnt = Maleonitriledithiolato) AM Madalan, N Avarvari, M Fourmigué, R Clérac, LF Chibotaru, S Clima, ... Inorganic chemistry 47 (3), 940-950, 2008 | 104 | 2008 |
| First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ... Applied Physics Letters 100 (13), 2012 | 101 | 2012 |
| Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ... 2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012 | 96 | 2012 |
| Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A Fantini, G Gorine, R Degraeve, L Goux, CY Chen, A Redolfi, S Clima, ... 2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015 | 87 | 2015 |
| Composition influence on the physical and electrical properties of SrxTi1− xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom … N Menou, M Popovici, S Clima, K Opsomer, W Polspoel, B Kaczer, ... Journal of Applied Physics 106 (9), 2009 | 72 | 2009 |
| Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations L Zhao, S Clima, B Magyari-Köpe, M Jurczak, Y Nishi Applied Physics Letters 107 (1), 2015 | 70 | 2015 |
| Thermally stable integrated Se-based OTS selectors with >20 MA/cm2current drive, >3.103half-bias nonlinearity, tunable threshold voltage and excellent endurance B Govoreanu, GL Donadio, K Opsomer, W Devulder, VV Afanas' ev, ... 2017 Symposium on VLSI Technology, T92-T93, 2017 | 69 | 2017 |
| Ovonic Threshold‐Switching GexSey Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles S Clima, D Garbin, K Opsomer, NS Avasarala, W Devulder, I Shlyakhov, ... physica status solidi (RRL)–Rapid Research Letters 14 (5), 1900672, 2020 | 67 | 2020 |
| Embedding fragment ab initio model potentials in CASSCF/CASPT2 calculations of doped solids: Implementation and applications B Swerts, LF Chibotaru, R Lindh, L Seijo, Z Barandiaran, S Clima, ... Journal of Chemical Theory and Computation 4 (4), 586-594, 2008 | 65 | 2008 |
| Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ... 2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012 | 64 | 2012 |
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