| Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22 (25), 254023, 2011 | 322 | 2011 |
| TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application J Shin, I Kim, KP Biju, M Jo, J Park, J Lee, S Jung, W Lee, S Kim, S Park, ... Journal of Applied Physics 109 (3), 2011 | 177 | 2011 |
| Diode-less nano-scale ZrOx/HfOxRRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications J Lee, J Shin, D Lee, W Lee, S Jung, M Jo, J Park, KP Biju, S Kim, S Park, ... 2010 International Electron Devices Meeting, 19.5. 1-19.5. 4, 2010 | 134 | 2010 |
| Multibit Operation of-Based ReRAM by Schottky Barrier Height Engineering J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang IEEE Electron Device Letters 32 (4), 476-478, 2011 | 116 | 2011 |
| Effect of crystallization on humidity sensing properties of sol–gel derived nanocrystalline TiO2 thin films KP Biju, MK Jain Thin Solid Films 516 (8), 2175-2180, 2008 | 113 | 2008 |
| Sol–gel derived TiO2: ZrO2 multilayer thin films for humidity sensing application KP Biju, MK Jain Sensors and Actuators B: Chemical 128 (2), 407-413, 2008 | 106 | 2008 |
| Resistive switching characteristics and mechanism of thermally grown WOx thin films KP Biju, X Liu, M Siddik, S Kim, J Shin, I Kim, A Ignatiev, H Hwang Journal of Applied Physics 110 (6), 2011 | 97 | 2011 |
| Effect of Scaling-Based RRAMs on Their Resistive Switching Characteristics S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ... IEEE electron device letters 32 (5), 671-673, 2011 | 65 | 2011 |
| Surface modification of sol gel TiO2 surface with sputtered metallic silver for Sun light photocatalytic activity: Initial studies A Subrahmanyam, KP Biju, P Rajesh, KJ Kumar, MR Kiran Solar Energy Materials and Solar Cells 101, 241-248, 2012 | 58 | 2012 |
| Low temperature solution-processed graphene oxide/Pr0. 7Ca0. 3MnO3 based resistive-memory device I Kim, M Siddik, J Shin, KP Biju, S Jung, H Hwang Applied Physics Letters 99 (4), 2011 | 56 | 2011 |
| Low programming voltage resistive switching in reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 devices X Liu, KP Biju, EM Bourim, S Park, W Lee, J Shin, H Hwang Solid state communications 150 (45-46), 2231-2235, 2010 | 52 | 2010 |
| Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang Journal of Physics D: Applied Physics 43 (49), 495104, 2010 | 52 | 2010 |
| Fast Diffusion of Very Long Chain Saturated Fatty Acids across a Bilayer Membrane and Their Rapid Extraction by Cyclodextrins BK Pillai, R Jasuja, JR Simard, JA Hamilton Journal of Biological Chemistry 284 (48), 33296-33304, 2009 | 52 | 2009 |
| Effect of post-annealing on the band gap of sol–gel prepared nano-crystalline Mg x Zn1−x O (0.0 ≤ x ≤ 0.3) thin films SR Meher, KP Biju, MK Jain Journal of sol-gel science and technology 52, 228-234, 2009 | 41 | 2009 |
| Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films KP Biju, X Liu, S Kim, S Jung, J Park, H Hwang physica status solidi (RRL)–Rapid Research Letters 5 (3), 89-91, 2011 | 40 | 2011 |
| Effect of polyethylene glycol additive in sol on the humidity sensing properties of a TiO2 thin film KP Biju, MK Jain Measurement Science and Technology 18 (9), 2991, 2007 | 35 | 2007 |
| Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application KP Biju, X Liu, J Shin, I Kim, S Jung, M Siddik, J Lee, A Ignatiev, H Hwang Current Applied Physics 11 (4), S102-S106, 2011 | 30 | 2011 |
| Parallel memristive filaments model applicable to bipolar and filamentary resistive switching X Liu, KP Biju, J Lee, J Park, S Kim, S Park, J Shin, SM Sadaf, H Hwang Applied Physics Letters 99 (11), 2011 | 29 | 2011 |
| Improved resistive switching properties in Pt/Pr0. 7Ca0. 3MnO3/Y2O3-stabilized ZrO2/W via-hole structures X Liu, KP Biju, S Park, I Kim, M Siddik, S Sadaf, H Hwang Current Applied Physics 11 (2), e58-e61, 2011 | 27 | 2011 |
| Improvement of resistive switching uniformity by introducing a thin NbOx interface layer X Liu, SM Sadaf, S Kim, KP Biju, X Cao, M Son, SH Choudhury, GY Jung, ... ECS Solid State Letters 1 (5), Q35, 2012 | 22 | 2012 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr