| Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires S Selmo, R Cecchini, S Cecchi, C Wiemer, M Fanciulli, E Rotunno, ... Applied Physics Letters 109 (21), 213103, 2016 | 22 | 2016 |
| MOCVD growth and structural characterization of In–Sb–Te nanowires S Selmo, S Cecchi, R Cecchini, C Wiemer, M Fanciulli, E Rotunno, ... physica status solidi (a) 213 (2), 335-338, 2016 | 14 | 2016 |
| Thermal resistance measurement of In3SbTe2 nanowires JL Battaglia, A Saci, I De, R Cecchini, S Selmo, M Fanciulli, S Cecchi, ... physica status solidi (a) 214 (5), 1600500, 2017 | 10 | 2017 |
| In-doped Sb nanowires grown by MOCVD for high speed phase change memories R Cecchini, S Selmo, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, ... Micro and Nano Engineering 2, 117-121, 2019 | 8 | 2019 |
| Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD R Cecchini, S Selmo, C Wiemer, E Rotunno, L Lazzarini, M De Luca, ... Materials Research Letters 6 (1), 29-35, 2018 | 6 | 2018 |
| MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires M Longo, S Cecchi, S Selmo, M Fanciulli, C Wiemer, JL Battaglia, A Saci, ... 2015 1st Workshop on Nanotechnology in Instrumentation and Measurement …, 2015 | 4 | 2015 |
| Functional analysis of In-based nanowires for low power phase change memory applications S Selmo Università degli Studi di Milano-Bicocca, 2017 | | 2017 |
Raimondo CecchiniCNR-IMM, Bologna UnitVerified email at bo.imm.cnr.it
