| A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk … VK Dixit, S Porwal, SD Singh, TK Sharma, S Ghosh, SM Oak Journal of Physics D: Applied Physics 47 (6), 065103, 2014 | 58 | 2014 |
| Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si VK Dixit, T Ganguli, TK Sharma, SD Singh, R Kumar, S Porwal, P Tiwari, ... Journal of Crystal Growth 310 (15), 3428-3435, 2008 | 58 | 2008 |
| Investigations on band commutativity at all oxide p-type NiO/n-type β-Ga2O3 heterojunction using photoelectron spectroscopy S Ghosh, M Baral, R Kamparath, SD Singh, T Ganguli Applied Physics Letters 115 (25), 2019 | 43 | 2019 |
| Determination of the optical gap bowing parameter for ternary Ni 1− x Zn x O cubic rocksalt solid solutions SD Singh, V Nandanwar, H Srivastava, AK Yadav, A Bhakar, PR Sagdeo, ... Dalton Transactions 44 (33), 14793-14798, 2015 | 41 | 2015 |
| Epitaxial growth and band alignment properties of NiO/GaN heterojunction for light emitting diode applications K Baraik, SD Singh, Y Kumar, RS Ajimsha, P Misra, SN Jha, T Ganguli Applied Physics Letters 110 (19), 2017 | 33 | 2017 |
| Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques SD Singh, M Nand, A Das, RS Ajimsha, A Upadhyay, R Kamparath, ... Journal of Applied Physics 119 (16), 2016 | 32 | 2016 |
| Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy SD Singh, RS Ajimsha, V Sahu, R Kumar, P Misra, DM Phase, SM Oak, ... Applied Physics Letters 101 (21), 2012 | 32 | 2012 |
| Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 pn heterojunction S Ghosh, M Baral, R Kamparath, RJ Choudhary, DM Phase, SD Singh, ... Applied Physics Letters 115 (6), 2019 | 31 | 2019 |
| Studies on structural and optical properties of pulsed laser deposited NiO thin films under varying deposition parameters SD Singh, A Das, RS Ajimsha, MN Singh, A Upadhyay, R Kamparath, ... Materials Science in Semiconductor Processing 66, 186-190, 2017 | 28 | 2017 |
| Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode SK Khamari, VK Dixit, T Ganguli, S Porwal, SD Singh, S Kher, RK Sharma, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011 | 28 | 2011 |
| Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells SD Singh, VK Dixit, S Porwal, R Kumar, AK Srivastava, T Ganguli, ... Applied Physics Letters 97 (11), 111912-111912-3, 2010 | 28 | 2010 |
| Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well SD Singh, S Porwal, TK Sharma, KC Rustagi Journal of applied physics 99 (6), 063517-063517-6, 2006 | 25 | 2006 |
| Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates S Ghosh, H Srivastava, PN Rao, M Nand, P Tiwari, AK Srivastava, SN Jha, ... Semiconductor Science and Technology 35 (8), 085024, 2020 | 23 | 2020 |
| Investigation of crystalline and electronic band alignment properties of GaP/Ge (111) heterostructure VK Dixit, S Kumar, SD Singh, SK Khamari, R Kumar, P Tiwari, DM Phase, ... Applied Physics Letters 104 (9), 2014 | 21 | 2014 |
| Data-reduction procedure for correction of geometric factors in the analysis of specular X-ray reflectivity of small samples A Das, SD Singh, RJ Choudhari, SK Rai, T Ganguli Journal of Applied Crystallography 51 (5), 1295-1303, 2018 | 16 | 2018 |
| Crystalline and band alignment properties of InAs/Ge (111) heterostructure S Pal, SD Singh, VK Dixit, TK Sharma, R Kumar, AK Sinha, V Sathe, ... Journal of Alloys and Compounds 646, 393-398, 2015 | 16 | 2015 |
| Synchrotron based photoemission study on the band alignment and interface at ZnO/GaP hetero-junction SD Singh, T Ganguli, RS Ajimsha, P Misra, DM Phase, LM Kukreja, ... Applied Physics Letters 104 (1), 2014 | 16 | 2014 |
| Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1− x) 2O3 alloys for x≤ 0.35 determined from low temperature optical reflectivity J Bhattacharjee, S Ghosh, P Pokhriyal, R Gangwar, R Dutt, A Sagdeo, ... AIP Advances 11 (7), 2021 | 15 | 2021 |
| Bond length variation in Zn substituted NiO studied from extended X-ray absorption fine structure SD Singh, AK Poswal, C Kamal, P Rajput, A Chakrabarti, SN Jha, ... Solid State Communications 259, 40-44, 2017 | 15 | 2017 |
| Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain TK Sharma, SD Singh, S Porwal, AK Nath Journal of crystal growth 298, 527-530, 2007 | 15 | 2007 |
Dr. V K DIXITProfessor (Associate) at Homi Bhabha National Institute & Scientist (SO/H) at RRCATVerified email at rrcat.gov.in
