Jiyoung Kim

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Robert M. WallaceUniversity of Texas at DallasVerified email at utdallas.edu
Christopher HinkleUniversity of Notre Dame, Electrical EngineeringVerified email at nd.edu
Lanxia ChengStaff Engineer_EMD ElectronicsVerified email at emdgroup.com
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESVerified email at globalfoundries.com
Luigi ColomboUniversity of Texas at DallasVerified email at utdallas.edu
Stephen McDonnellUniversity of VirginiaVerified email at virginia.edu
Si Joon KimAssociate Professor, Kangwon National UniversityVerified email at kangwon.ac.kr
Hyunjung ShinSungkyunkwan UniversityVerified email at skku.edu
Jaidah MohanSenior Process Development EngineerVerified email at micron.com
Harrison Sejoon KimIntel ATTDVerified email at intel.com
Greg MordiThe University of Texas at DallasVerified email at utdallas.edu
Barry BrennanAtlantic Technological UniversityVerified email at atu.ie
Rafik AddouOregon State UniversityVerified email at oregonstate.edu
Hong DongNankai UniversityVerified email at nankai.edu.cn
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyVerified email at mse.gatech.edu
Jinho AhnProfessor of Materials Science and Engineering, Hanyang UniversityVerified email at hanyang.ac.kr
Yves Jean ChabalUniversity of Texas at DallasVerified email at utdallas.edu
Srikar JandhyalaEngineering Manager, Intel CorporationVerified email at intel.com
Myung Mo SungHanyang University, Chemistry DepartmentVerified email at HANYANG.AC.KR
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyVerified email at cimav.edu.mx

Jiyoung Kim

Professor, Department of Materials Science and Engineering, University of Texas at Dallas

Verified email at utdallas.edu - Homepage

Advanced CMOS Atomic Layer Deposition Gate Stack ferroelectrics 2D-Nanomaterials and Heterostructures


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GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	492	2008
Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016	420	2016
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin Chemistry of Materials 20 (3), 756-767, 2008	371	2008
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 2008	365	2008
Metal Contacts on Physical Vapor Deposited Monolayer MoS₂ C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ... ACS nano 7 (12), 11350-11357, 2013	352	2013
Formation of TiO₂ and ZrO₂ Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness H Shin, DK Jeong, J Lee, MM Sung, J Kim Advanced Materials 16 (14), 1197-1200, 2004	341	2004
HfO₂ on MoS₂ by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013	325	2013
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017	304	2017
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance SJ Kim, J Mohan, SR Summerfelt, J Kim JOM 71 (1), 246, 2019	297*	2019
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ... ACS Nano 10 (6), 6054-6061, 2016	258	2016
HfSe₂ Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015	246	2015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014	235	2014
Ozone adsorption on graphene: ab initio study and experimental validation G Lee, B Lee, J Kim, K Cho The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009	222	2009
Half-cycle atomic layer deposition reaction studies of on (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 202902, 2008	191	2008
Remote Plasma Oxidation and Atomic Layer Etching of MoS₂ H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016	188	2016
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu ACS Nano 12 (6), 6292, 2018	175	2018
Comparison of the sputter rates of oxide films relative to the sputter rate of DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28 (5 …, 2010	164	2010
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012	161	2012
Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017	156	2017
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017	151	2017

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