| 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ... 2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011 | 914 | 2011 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ... Nano letters 14 (5), 2401-2406, 2014 | 373 | 2014 |
| Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ... IEEE Transactions on electron devices 60 (3), 1114-1121, 2013 | 292 | 2013 |
| Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ... Applied Physics Letters 97 (24), 2010 | 278 | 2010 |
| Intrinsic switching variability in HfO2RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ... 2013 5th IEEE International Memory Workshop, 30-33, 2013 | 262 | 2013 |
| Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers L Goux, JG Lisoni, M Jurczak, DJ Wouters, L Courtade, C Muller Journal of Applied Physics 107 (2), 2010 | 234 | 2010 |
| Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ... IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012 | 221 | 2012 |
| Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ... Nano letters 15 (12), 7970-7975, 2015 | 201 | 2015 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 177 | 2021 |
| Vertical phase change memory cell and methods for manufacturing thereof LRA Goux, DJCCM Wouters, JGL Reyes, T Gille US Patent 7,728,319, 2010 | 156 | 2010 |
| On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ... Electrochemical and Solid-State Letters 13 (6), G54, 2010 | 150 | 2010 |
| Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters Solid-State Electronics 58 (1), 42-47, 2011 | 143 | 2011 |
| Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ... 2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013 | 137 | 2013 |
| Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ... Microelectronic Engineering 147, 171-175, 2015 | 133 | 2015 |
| Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ... 2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012 | 119 | 2012 |
| International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... IEEE, Washington, DC, 402, 2011 | 118 | 2011 |
| Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ... Applied Physics Letters 99 (5), 2011 | 118 | 2011 |
| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 114 | 2020 |
| Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ... 2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012 | 110 | 2012 |
