| Observation of conducting filament growth in nanoscale resistive memories Y Yang, P Gao, S Gaba, T Chang, X Pan, W Lu Nature communications 3 (1), 732, 2012 | 1211 | 2012 |
| A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications KH Kim, S Gaba, D Wheeler, JM Cruz-Albrecht, T Hussain, N Srinivasa, ... Nano letters 12 (1), 389-395, 2012 | 1082 | 2012 |
| Synaptic behaviors and modeling of a metal oxide memristive device T Chang, SH Jo, KH Kim, P Sheridan, S Gaba, W Lu Applied physics A 102, 857-863, 2011 | 487 | 2011 |
| Stochastic memristive devices for computing and neuromorphic applications S Gaba, P Sheridan, J Zhou, S Choi, W Lu Nanoscale 5 (13), 5872-5878, 2013 | 335 | 2013 |
| Nanoscale resistive memory with intrinsic diode characteristics and long endurance KH Kim, S Hyun Jo, S Gaba, W Lu Applied Physics Letters 96 (5), 2010 | 284 | 2010 |
| Two-terminal resistive switches (memristors) for memory and logic applications W Lu, KH Kim, T Chang, S Gaba 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 217-223, 2011 | 144 | 2011 |
| Si memristive devices applied to memory and neuromorphic circuits SH Jo, KH Kim, T Chang, S Gaba, W Lu Proceedings of 2010 IEEE International Symposium on Circuits and Systems, 13-16, 2010 | 128 | 2010 |
| Device and SPICE modeling of RRAM devices P Sheridan, KH Kim, S Gaba, T Chang, L Chen, W Lu Nanoscale 3 (9), 3833-3840, 2011 | 124 | 2011 |
| Very low-programming-current RRAM with self-rectifying characteristics J Zhou, F Cai, Q Wang, B Chen, S Gaba, WD Lu IEEE Electron Device Letters 37 (4), 404-407, 2016 | 115 | 2016 |
| Memristive devices for stochastic computing S Gaba, P Knag, Z Zhang, W Lu 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2592-2595, 2014 | 71 | 2014 |
| Experimental, modeling and simulation studies of nanoscale resistance switching devices SH Jo, T Chang, KH Kim, S Gaba, W Lu 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), 493-495, 2009 | 68 | 2009 |
| Conduction mechanism of a TaO x-based selector and its application in crossbar memory arrays M Wang, J Zhou, Y Yang, S Gaba, M Liu, WD Lu Nanoscale 7 (11), 4964-4970, 2015 | 52 | 2015 |
| Ultralow sub-1-nA operating current resistive memory with intrinsic non-linear characteristics S Gaba, F Cai, J Zhou, WD Lu IEEE Electron Device Letters 35 (12), 1239-1241, 2014 | 44 | 2014 |
| In situ TEM observation of conducting filament growth in vertical Ag/a-Si/W memories Y Yang, P Gao, S Gaba, T Chang, X Pan, W Lu Nature Commun 3, 732, 2012 | 29 | 2012 |
| A low-power variation-aware adaptive write scheme for access-transistor-free memristive memory A Ghofrani, MA Lastras-Montano, S Gaba, M Payvand, W Lu, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 12 (1), 1-18, 2015 | 17 | 2015 |
| RRAM solutions for stochastic computing P Knag, S Gaba, W Lu, Z Zhang Stochastic Computing: Techniques and Applications, 153-164, 2019 | 9 | 2019 |
| 3-D vertical dual-layer oxide memristive devices S Gaba, P Sheridan, C Du, W Lu IEEE Transactions on Electron Devices 61 (7), 2581-2583, 2014 | 9 | 2014 |
| CMOS-integrated memristors for neuromorphic architectures D Wheeler, KH Kim, S Gaba, E Wang, S Kim, I Valles, J Li, Y Royter, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 7 | 2011 |
| Resistive-RAM for Data Storage Applications. S Gaba | 4 | 2014 |
| Improvement of RRAM device performance through on-chip resistors S Gaba, S Choi, P Sheridan, T Chang, Y Yang, W Lu MRS Online Proceedings Library (OPL) 1430, mrss12-1430-e09-09, 2012 | 4 | 2012 |
Wei D. LuJames R. Mellor Professor, EECS, Univ of Michigan, IEEE Fellow. co-founder MemryX Inc, Crossbar Inc.Verified email at umich.edu
