Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride HL Stern, Q Gu, J Jarman, S Eizagirre Barker, N Mendelson, D Chugh, ... Nature communications 13 (1), 618, 2022 | 197 | 2022 |
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver Scientific reports 7 (1), 1-8, 2017 | 73 | 2017 |
Ideal refocusing of an optically active spin qubit under strong hyperfine interactions L Zaporski, N Shofer, JH Bodey, S Manna, G Gillard, MH Appel, ... Nature nanotechnology 18 (3), 257-263, 2023 | 64 | 2023 |
α-Ga2O3 grown by low temperature atomic layer deposition on sapphire JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ... Journal of Crystal Growth 487, 23-27, 2018 | 55 | 2018 |
Atomic layer deposited α-Ga2O3 solar-blind photodetectors J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ... Journal of Physics D: Applied Physics 52 (47), 475101, 2019 | 47 | 2019 |
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor Nanoscale 9 (27), 9421-9427, 2017 | 39 | 2017 |
Suitability of analytical methods to measure solubility for the purpose of nanoregulation R Tantra, H Bouwmeester, E Bolea, C Rey-Castro, CA David, JM Dogné, ... Nanotoxicology 10 (2), 173-184, 2016 | 37 | 2016 |
Improvement of single photon emission from InGaN QDs embedded in porous micropillars HP Springbett, K Gao, J Jarman, T Zhu, M Holmes, Y Arakawa, RA Oliver Applied Physics Letters 113 (10), 2018 | 28 | 2018 |
Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot CC Kocher, TJ Puchtler, JC Jarman, T Zhu, T Wang, L Nuttall, RA Oliver, ... Applied Physics Letters 111 (25), 2017 | 12 | 2017 |
Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures T Wang, TJ Puchtler, SK Patra, T Zhu, JC Jarman, RA Oliver, S Schulz, ... Scientific Reports 7 (1), 12067, 2017 | 12 | 2017 |
Study of Ti contacts to corundum α-Ga2O3 F Massabuau, D Nicol, F Adams, J Jarman, J Roberts, A Kovács, ... Journal of Physics D: Applied Physics 54 (38), 384001, 2021 | 11 | 2021 |
Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates JC Jarman, T Zhu, PH Griffin, RA Oliver Japanese Journal of Applied Physics 58 (SC), SCCC14, 2019 | 11 | 2019 |
Pure single-photon emission from an InGaN/GaN quantum dot MJ Holmes, T Zhu, FCP Massabuau, J Jarman, RA Oliver, Y Arakawa APL Materials 9 (6), 2021 | 10 | 2021 |
High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method T Wang, TJ Puchtler, T Zhu, JC Jarman, RA Oliver, RA Taylor physica status solidi (b) 254 (8), 1600724, 2017 | 10 | 2017 |
Progress in atomic layer deposited [alpha]-Ga2O3 materials and solar-blind detectors FCP Massabuau, JW Roberts, D Nicol, PR Edwards, M McLelland, ... Oxide-based Materials and Devices XII 11687, 23-30, 2021 | 7 | 2021 |
Temperature-dependent fine structure splitting in InGaN quantum dots T Wang, TJ Puchtler, T Zhu, JC Jarman, CC Kocher, RA Oliver, RA Taylor Applied Physics Letters 111 (5), 2017 | 7 | 2017 |
Nanomaterial syntheses R Tantra, KN Robinson, JC Jarman, T Sainsbury Nanomaterial Characterization: Introduction, An, 25-48, 2016 | 7 | 2016 |
On-chip thermal insulation using porous GaN BF Spiridon, PH Griffin, JC Jarman, Y Liu, T Zhu, A De Luca, RA Oliver, ... Proceedings 2 (1), 776, 2018 | 5 | 2018 |
Combined SEM-CL and STEM investigation of green InGaN quantum wells B Ding, J Jarman, MJ Kappers, RA Oliver Journal of Physics D: Applied Physics 54 (16), 165107, 2021 | 4 | 2021 |
Role of standard documents in advancing the standardization of microfluidics connectors R Tantra, H van Heeren, J Jarman Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (2), 020501-020501, 2016 | 4 | 2016 |