| Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo Solid-State Electronics 51 (2), 239-244, 2007 | 159 | 2007 |
| Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ... IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007 | 117 | 2007 |
| Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo IEEE Transactions on Electron Devices 55 (9), 2512-2516, 2008 | 114 | 2008 |
| Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors YM Meziani, J Łusakowski, W Knap, N Dyakonova, F Teppe, K Romanjek, ... journal of applied physics 96 (10), 5761-5765, 2004 | 93 | 2004 |
| Theory of direct tunneling current in metal–oxide–semiconductor structures R Clerc, A Spinelli, G Ghibaudo, G Pananakakis Journal of applied physics 91 (3), 1400-1409, 2002 | 91 | 2002 |
| Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo IEEE transactions on electron devices 55 (10), 2623-2631, 2008 | 81 | 2008 |
| A compact drain current model of short-channel cylindrical gate-all-around MOSFETs A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ... Semiconductor science and technology 24 (7), 075017, 2009 | 67 | 2009 |
| Characterization of effective mobility by split C (V) technique in N-MOSFETs with ultra-thin gate oxides F Lime, C Guiducci, R Clerc, G Ghibaudo, C Leroux, T Ernst Solid-State Electronics 47 (7), 1147-1153, 2003 | 64 | 2003 |
| Evaluation of indoor photovoltaic power production under directional and diffuse lighting conditions CA Reynaud, R Clerc, PB Lechêne, M Hébert, A Cazier, AC Arias Solar Energy Materials and Solar Cells 200, 110010, 2019 | 56 | 2019 |
| Analytical modeling of organic solar cells and photodiodes S Altazin, R Clerc, R Gwoziecki, G Pananakakis, G Ghibaudo, ... Applied Physics Letters 99 (14), 2011 | 55 | 2011 |
| On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices R Clerc, P Palestri, L Selmi IEEE Transactions on Electron Devices 53 (7), 1634-1640, 2006 | 50 | 2006 |
| A physical compact model for direct tunneling from NMOS inversion layers R Clerc, P O'sullivan, KG McCarthy, G Ghibaudo, G Pananakakis, ... Solid-State Electronics 45 (10), 1705-1716, 2001 | 50 | 2001 |
| Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices P Mur, MN Semeria, M Olivier, AM Papon, C Leroux, G Reimbold, ... Applied surface science 175, 726-733, 2001 | 48 | 2001 |
| Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Q Rafhay, R Clerc, G Ghibaudo, G Pananakakis Solid-State Electronics 52 (10), 1474-1481, 2008 | 44 | 2008 |
| Impact of blend morphology on interface state recombination in bulk heterojunction organic solar cells B Bouthinon, R Clerc, J Vaillant, JM Verilhac, J Faure‐Vincent, D Djurado, ... Advanced Functional Materials 25 (7), 1090-1101, 2015 | 37 | 2015 |
| Evidence of band bending induced by hole trapping at MAPbI 3 perovskite/metal interface YF Chen, YT Tsai, DM Bassani, R Clerc, D Forgács, HJ Bolink, M Wussler, ... Journal of Materials Chemistry A 4 (44), 17529-17536, 2016 | 36 | 2016 |
| Electrical characterization and modeling of MOS structures with an ultra-thin oxide R Clerc, B De Salvo, G Ghibaudo, G Reimbold, G Pananakakis Solid-State Electronics 46 (3), 407-416, 2002 | 35 | 2002 |
| Analysis of edge losses on silicon heterojunction half solar cells F Gérenton, J Eymard, S Harrison, R Clerc, D Muñoz Solar Energy Materials and Solar Cells 204, 110213, 2020 | 33 | 2020 |
| Time-dependent many-particle simulation for resonant tunneling diodes: Interpretation of an analytical small-signal equivalent circuit FL Traversa, E Buccafurri, A Alarcon, G Albareda, R Clerc, F Calmon, ... IEEE transactions on electron devices 58 (7), 2104-2112, 2011 | 32 | 2011 |
| Multi-subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs P Palestri, R Clerc, D Esseni, L Lucci, L Selmi 2006 International Electron Devices Meeting, 1-4, 2006 | 30 | 2006 |
Gerard GhibaudoIMEP-LAHC, Minatec-INP GrenobleVerified email at minatec.inpg.fr