Articles with public access mandates - Marius GrundmannLearn more
Not available anywhere: 158
Whispering gallery mode lasing in zinc oxide microwires
C Czekalla, C Sturm, R Schmidt-Grund, B Cao, M Lorenz, M Grundmann
Applied physics letters 92 (24), 2008
Mandates: German Research Foundation
Mean barrier height of Pd Schottky contacts on ZnO thin films
H von Wenckstern, G Biehne, RA Rahman, H Hochmuth, M Lorenz, ...
Applied physics letters 88 (9), 2006
Mandates: German Research Foundation
Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits
H Frenzel, A Lajn, H Von Wenckstern, M Lorenz, F Schein, Z Zhang, ...
Advanced Materials 22 (47), 5332-5349, 2010
Mandates: German Research Foundation
Transparent p-CuI/n-ZnO heterojunction diodes
FL Schein, H von Wenckstern, M Grundmann
Applied Physics Letters 102 (9), 2013
Mandates: German Research Foundation
Defects in virgin and -implanted ZnO single crystals studied by positron annihilation, Hall effect, and deep-level transient spectroscopy
G Brauer, W Anwand, W Skorupa, J Kuriplach, O Melikhova, C Moisson, ...
Physical Review B—Condensed Matter and Materials Physics 74 (4), 045208, 2006
Mandates: German Research Foundation
Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001)
R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
Mandates: Leibniz Association
Oxide bipolar electronics: materials, devices and circuits
M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ...
Journal of Physics D: Applied Physics 49 (21), 213001, 2016
Mandates: German Research Foundation
Properties of reactively sputtered Ag, Au, Pd, and Pt Schottky contacts on n-type ZnO
A Lajn, H Wenckstern, Z Zhang, C Czekalla, G Biehne, J Lenzner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
Mandates: German Research Foundation
Raman active phonon modes of cubic In2O3
C Kranert, R Schmidt‐Grund, M Grundmann
physica status solidi (RRL)–Rapid Research Letters 8 (6), 554-559, 2014
Mandates: German Research Foundation
Occurrence of rotation domains in heteroepitaxy
M Grundmann, T Böntgen, M Lorenz
Physical review letters 105 (14), 146102, 2010
Mandates: German Research Foundation
Electrical and magnetic properties of RE-doped ZnO thin films (RE= Gd, Nd)
M Ungureanu, H Schmidt, Q Xu, H von Wenckstern, D Spemann, ...
Superlattices and Microstructures 42 (1-6), 231-235, 2007
Mandates: German Research Foundation
exchange interaction induced magnetoresistance in magnetic ZnO
Q Xu, L Hartmann, H Schmidt, H Hochmuth, M Lorenz, D Spemann, ...
Physical Review B—Condensed Matter and Materials Physics 76 (13), 134417, 2007
Mandates: German Research Foundation
Continuous composition spread using pulsed-laser deposition with a single segmented target
H von Wenckstern, Z Zhang, F Schmidt, J Lenzner, H Hochmuth, ...
CrystEngComm 15 (46), 10020-10027, 2013
Mandates: German Research Foundation
Ordered growth of tilted ZnO nanowires: morphological, structural and optical characterization
J Zuniga-Perez, A Rahm, C Czekalla, J Lenzner, M Lorenz, M Grundmann
Nanotechnology 18 (19), 195303, 2007
Mandates: German Research Foundation
Luminescence and surface properties of MgxZn1− xO thin films grown by pulsed laser deposition
S Heitsch, G Zimmermann, D Fritsch, C Sturm, R Schmidt-Grund, ...
Journal of applied physics 101 (8), 2007
Mandates: German Research Foundation
Interface recombination current in type II heterostructure bipolar diodes
M Grundmann, R Karsthof, H von Wenckstern
ACS applied materials & interfaces 6 (17), 14785-14789, 2014
Mandates: German Research Foundation
Lineshape theory of photoluminescence from semiconductor alloys
M Grundmann, CP Dietrich
Journal of Applied Physics 106 (12), 2009
Mandates: German Research Foundation
Wavelength selective metal-semiconductor-metal photodetectors based on (Mg, Zn) O-heterostructures
Z Zhang, H von Wenckstern, M Schmidt, M Grundmann
Applied Physics Letters 99 (8), 2011
Mandates: German Research Foundation
Properties of Schottky Barrier Diodes on (InxGa1–x)2O3 for 0.01 ≤ x ≤ 0.85 Determined by a Combinatorial Approach
H Von Wenckstern, D Splith, A Werner, S Müller, M Lorenz, ...
ACS Combinatorial Science 17 (12), 710-715, 2015
Mandates: German Research Foundation
Excitonic transport in ZnO
M Noltemeyer, F Bertram, T Hempel, B Bastek, A Polyakov, J Christen, ...
Journal of Materials Research 27 (17), 2225-2231, 2012
Mandates: German Research Foundation
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