| Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate PA Wroński, P Wyborski, A Musiał, P Podemski, G Sęk, S Höfling, ... Materials 14 (18), 5221, 2021 | 10 | 2021 |
| Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer P Wyborski, P Podemski, PA Wroński, F Jabeen, S Höfling, G Sęk Materials 15 (3), 1071, 2022 | 9 | 2022 |
| InP-Substrate-Based Quantum Dashes on a DBR as Single-Photon Emitters at the Third Telecommunication Window P Wyborski, A Musiał, P Mrowiński, P Podemski, V Baumann, P Wroński, ... Materials 14 (4), 759, 2021 | 7 | 2021 |
| Impact of MBE-grown metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the … P Wyborski, M Gawełczyk, P Podemski, PA Wroński, M Pawlyta, ... Physical Review Applied 20 (4), 044009, 2023 | 3 | 2023 |
| Resonance fluorescence from an atomic-quantum-memory compatible single photon source based on GaAs droplet quantum dots LN Tripathi, YM He, Ł Dusanowski, PA Wroński, CY Lu, C Schneider, ... Applied Physics Letters 113 (2), 021102, 2018 | 3 | 2018 |
| InGaAs metamorphic buffers grown by MBE on GaAs affect the excitonic and optical properties of single InAs quantum dots while tuning their single photon emission to the telecom … P Wyborski, M Gawełczyk, P Podemski, PA Wroński, M Pawlyta, ... arXiv e-prints, arXiv: 2305.00289, 2023 | | 2023 |