| Langmuir− Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures S Paul, C Pearson, A Molloy, MA Cousins, M Green, S Kolliopoulou, ... Nano Letters 3 (4), 533-536, 2003 | 361 | 2003 |
| Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices. M Lübben, P Karakolis, V Ioannou-Sougleridis, P Normand, P Dimitrakis, ... Advanced Materials (Deerfield Beach, Fla.) 27 (40), 6202-6207, 2015 | 154 | 2015 |
| Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation C Bonafos, M Carrada, N Cherkashin, H Coffin, D Chassaing, ... Journal of applied physics 95 (10), 5696-5702, 2004 | 147 | 2004 |
| Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P Normand, E Kapetanakis, P Dimitrakis, D Tsoukalas, K Beltsios, ... Applied Physics Letters 83 (1), 168-170, 2003 | 143 | 2003 |
| Hybrid silicon–organic nanoparticle memory device S Kolliopoulou, P Dimitrakis, P Normand, HL Zhang, N Cant, SD Evans, ... Journal of Applied Physics 94 (8), 5234-5239, 2003 | 141 | 2003 |
| Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis P Dimitrakis, E Kapetanakis, D Tsoukalas, D Skarlatos, C Bonafos, ... Solid-State Electronics 48 (9), 1511-1517, 2004 | 109 | 2004 |
| Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications AV Emelyanov, KE Nikiruy, VA Demin, VV Rylkov, AI Belov, DS Korolev, ... Microelectronic Engineering 215, 110988, 2019 | 91 | 2019 |
| Recent advances in nanoparticle memories D Tsoukalas, P Dimitrakis, S Kolliopoulou, P Normand Materials Science and Engineering: B 124, 93-101, 2005 | 84 | 2005 |
| Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, E Kapetanakis, P Dimitrakis, D Skarlatos, K Beltsios, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 69 | 2004 |
| Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers H Coffin, C Bonafos, S Schamm, N Cherkashin, GB Assayag, A Claverie, ... Journal of applied physics 99 (4), 2006 | 64 | 2006 |
| Si and Ge nanocrystals for future memory devices C Bonafos, M Carrada, G Benassayag, S Schamm-Chardon, J Groenen, ... Materials Science in Semiconductor Processing 15 (6), 615-626, 2012 | 50 | 2012 |
| Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors SV Tikhov, AN Mikhaylov, AI Belov, DS Korolev, IN Antonov, VV Karzanov, ... Microelectronic Engineering 187, 134-138, 2018 | 49 | 2018 |
| MOS memory structures by very-low-energy-implanted Si in thin SiO2 P Dimitrakis, E Kapetanakis, P Normand, D Skarlatos, D Tsoukalas, ... Materials Science and Engineering: B 101 (1-3), 14-18, 2003 | 49 | 2003 |
| Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications C Bonafos, H Coffin, S Schamm, N Cherkashin, GB Assayag, P Dimitrakis, ... Solid-State Electronics 49 (11), 1734-1744, 2005 | 45 | 2005 |
| Electronic memory device based on a single-layer fluorene-containing organic thin film C Pearson, JH Ahn, MF Mabrook, DA Zeze, MC Petty, KT Kamtekar, ... Applied Physics Letters 91 (12), 2007 | 44 | 2007 |
| Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy JE Kruse, L Lymperakis, S Eftychis, A Adikimenakis, G Doundoulakis, ... Journal of Applied Physics 119 (22), 2016 | 40 | 2016 |
| Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping N Vasileiadis, P Karakolis, P Mandylas, V Ioannou-Sougleridis, ... IEEE Transactions on Nanotechnology, 2021 | 39 | 2021 |
| Metal nano-floating gate memory devices fabricated at low temperature S Koliopoulou, P Dimitrakis, D Goustouridis, P Normand, C Pearson, ... Microelectronic Engineering 83 (4-9), 1563-1566, 2006 | 36 | 2006 |
| Processing issues in silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications P Normand, P Dimitrakis, E Kapetanakis, D Skarlatos, K Beltsios, ... Microelectronic engineering 73, 730-735, 2004 | 35 | 2004 |
| Electrical behavior of memory devices based on fluorene-containing organic thin films P Dimitrakis, P Normand, D Tsoukalas, C Pearson, JH Ahn, MF Mabrook, ... Journal of Applied Physics 104 (4), 2008 | 33 | 2008 |
