Articles with public access mandates - Michael WaltlLearn more
Not available anywhere: 8
Efficient modeling of charge trapping at cryogenic temperatures—Part I: Theory
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6365-6371, 2021
Mandates: European Commission
Efficient modeling of charge trapping at cryogenic temperatures—part II: Experimental
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6372-6378, 2021
Mandates: European Commission
Impact of gate dielectrics on the threshold voltage in MoS2 transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, D Polyushkin, A Pospischil, ...
ECS Transactions 80 (1), 203, 2017
Mandates: Austrian Science Fund
Machine Learning Prediction of Defect Formation Energies in a-SiO2
D Milardovich, M Jech, D Waldhoer, M Waltl, T Grasser
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
Mandates: European Commission
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses
A Provias, T Knobloch, A Kitamura, KP O’Brien, CJ Dorow, D Waldhoer, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
Mandates: European Commission
Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)
C Wilhelmer, D Waldhoer, D Milardovich, L Cvitkovich, M Waltl, T Grasser
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandates: European Commission
Polaron formation in the hydrogenated amorphous silicon nitride
C Wilhelmer, D Waldhör, L Cvitkovich, D Milardovich, M Waltl, T Grasser
Physical Review B 110 (4), 045201, 2024
Mandates: European Commission
Metastability of Negatively Charged Hydroxyl-E’Centers and their Potential Role in Positive Bias Temperature Instabilities
C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
Mandates: European Commission
Available somewhere: 67
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
Mandates: Austrian Science Fund, National Natural Science Foundation of China …
Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors
YY Illarionov, AG Banshchikov, DK Polyushkin, S Wachter, T Knobloch, ...
Nature Electronics 2 (6), 230-235, 2019
Mandates: Austrian Science Fund
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
Mandates: Austrian Science Fund
Long-term stability and reliability of black phosphorus field-effect transistors
YY Illarionov, M Waltl, G Rzepa, JS Kim, S Kim, A Dodabalapur, ...
ACS nano 10 (10), 9543-9549, 2016
Mandates: US National Science Foundation, Austrian Science Fund
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
Mandates: Austrian Science Fund
Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation
YY Illarionov, KKH Smithe, M Waltl, T Knobloch, E Pop, T Grasser
IEEE Electron Device Letters 38 (12), 1763-1766, 2017
Mandates: US National Science Foundation, US Department of Defense, Austrian Science Fund
On the microscopic structure of hole traps in pMOSFETs
T Grasser, W Goes, Y Wimmer, F Schanovsky, G Rzepa, M Waltl, K Rott, ...
2014 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2014
Mandates: Austrian Science Fund, UK Engineering and Physical Sciences Research Council
A unified perspective of RTN and BTI
T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer
2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014
Mandates: Austrian Science Fund
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
T Knobloch, B Uzlu, YY Illarionov, Z Wang, M Otto, L Filipovic, M Waltl, ...
Nature Electronics 5 (6), 356-366, 2022
Mandates: Austrian Science Fund, German Research Foundation, European Commission …
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
Mandates: Austrian Science Fund
Energetic mapping of oxide traps in MoS2 field-effect transistors
YY Illarionov, T Knobloch, M Waltl, G Rzepa, A Pospischil, DK Polyushkin, ...
2D Materials 4 (2), 025108, 2017
Mandates: Austrian Science Fund
NBTI in nanoscale MOSFETs—The ultimate modeling benchmark
T Grasser, K Rott, H Reisinger, M Waltl, F Schanovsky, B Kaczer
IEEE Transactions on Electron Devices 61 (11), 3586-3593, 2014
Mandates: Austrian Science Fund
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