Articles with public access mandates - Neha AggarwalLearn more
Not available anywhere: 24
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
A Gundimeda, S Krishna, N Aggarwal, A Sharma, ND Sharma, KK Maurya, ...
Applied Physics Letters 110 (10), 2017
Mandates: Department of Science & Technology, India
Graphene quantum dot-sensitized ZnO-nanorod/GaN-nanotower heterostructure-based high-performance UV photodetectors
L Goswami, N Aggarwal, R Verma, S Bishnoi, S Husale, R Pandey, ...
ACS applied materials & interfaces 12 (41), 47038-47047, 2020
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Enlightening gallium nitride-based UV photodetectors
N Aggarwal, G Gupta
Journal of Materials Chemistry C 8 (36), 12348-12354, 2020
Mandates: Council of Scientific and Industrial Research, India
Extenuation of stress and defects in GaN films grown on a metal–organic chemical vapor deposition-GaN/c-sapphire substrate by plasma-assisted molecular beam epitaxy
N Aggarwal, STC Krishna, L Goswami, M Mishra, G Gupta, KK Maurya, ...
Crystal Growth & Design 15 (5), 2144-2150, 2015
Mandates: Council of Scientific and Industrial Research, India
GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
SK Jain, N Aggarwal, S Krishna, R Kumar, S Husale, V Gupta, G Gupta
Journal of Materials Science: Materials in Electronics 29, 8958-8963, 2018
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Current Transport and Band Alignment Study of MoS2/GaN and MoS2/AlGaN Heterointerfaces for Broadband Photodetection Application
SK Jain, RR Kumar, N Aggarwal, P Vashishtha, L Goswami, S Kuriakose, ...
ACS Applied Electronic Materials 2 (3), 710-718, 2020
Mandates: Council of Scientific and Industrial Research, India
Ultrafast photoresponse and enhanced photoresponsivity of indium nitride based broad band photodetector
S Krishna, A Sharma, N Aggarwal, S Husale, G Gupta
Solar Energy Materials and Solar Cells 172, 376-383, 2017
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
GaN-djoser pyramidal self powered UV photodetector for optical signal detection in rugged environments
P Vashishtha, L Goswami, SK Jain, N Aggarwal, G Gupta
Journal of Alloys and Compounds 930, 167267, 2023
Mandates: Council of Scientific and Industrial Research, India
Effect of metal contacts on a GaN/sapphire-based MSM ultraviolet photodetector
SK Jain, S Krishna, N Aggarwal, R Kumar, A Gundimeda, SC Husale, ...
Journal of Electronic Materials 47, 6086-6090, 2018
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE
S Krishna, N Aggarwal, M Mishra, KK Maurya, S Singh, N Dilawar, ...
Physical Chemistry Chemical Physics 18 (11), 8005-8014, 2016
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Correlation of donor-acceptor pair emission on the performance of GaN-based UV photodetector
S Krishna, N Aggarwal, A Gundimeda, A Sharma, S Husale, KK Maurya, ...
Materials Science in Semiconductor Processing 98, 59-64, 2019
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Wet chemical etching induced stress relaxed nanostructures on polar & non-polar epitaxial GaN films
M Mishra, A Gundimeda, S Krishna, N Aggarwal, B Gahtori, N Dilawar, ...
Physical Chemistry Chemical Physics 19 (13), 8787-8801, 2017
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Influence of metallic surface states on electron affinity of epitaxial AlN films
M Mishra, S Krishna, N Aggarwal, G Gupta
Applied Surface Science 407, 255-259, 2017
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Role of nanowire length on the performance of a self-driven NIR photodetector based on mono/bi-layer graphene (camphor)/Si-nanowire Schottky junction
H Chaliyawala, N Aggarwal, Z Purohit, R Patel, G Gupta, A Jaffre, ...
Nanotechnology 31 (22), 225208, 2020
Mandates: Council of Scientific and Industrial Research, India
Epitaxial growth of high In-content In0. 41Ga0. 59N/GaN heterostructure on (11–20) Al2O3 substrate
S Krishna, N Aggarwal, M Mishra, KK Maurya, M Kaur, G Sehgal, S Singh, ...
Journal of Alloys and Compounds 658, 470-475, 2016
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Electronic structure analysis of GaN films grown on r-and a-plane sapphire
M Mishra, SK TC, N Aggarwal, S Vihari, G Gupta
Journal of Alloys and Compounds 645, 230-234, 2015
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Influence of temperature and Al/N ratio on structural, chemical & electronic properties of epitaxial AlN films grown via PAMBE
SK Jain, M Mishra, N Aggarwal, S Krishna, B Gahtori, A Pandey, G Gupta
Applied Surface Science 455, 919-923, 2018
Mandates: Council of Scientific and Industrial Research, India
Electronic structure and chemical state analysis of nanoflowers decorated GaN and AlGaN/GaN heterostructure
M Mishra, S Krishna, N Aggarwal, A Gundimeda, G Gupta
Journal of Alloys and Compounds 708, 385-391, 2017
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Microstructural evolution of high quality AlN grown by PAMBE under different growth conditions
N Aggarwal, S Krishna, SK Jain, M Mishra, KK Maurya, S Singh, M Kaur, ...
Materials Science and Engineering: B 243, 71-77, 2019
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
Enhanced current transport in GaN/AlN based single and double barrier heterostructures
S Krishna, AG Reddy, N Aggarwal, M Kaur, S Husale, D Singh, M Singh, ...
Solar Energy Materials and Solar Cells 170, 160-166, 2017
Mandates: Council of Scientific and Industrial Research, India, Department of Science …
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