| New analysis methods for comprehensive understanding of random telegraph noise T Nagumo, K Takeuchi, S Yokogawa, K Imai, Y Hayashi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 138 | 2009 |
| Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude K Takeuchi, T Nagumo, S Yokogawa, K Imai, Y Hayashi 2009 Symposium on VLSI Technology, 54-55, 2009 | 129 | 2009 |
| Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assessment K Takeuchi, T Nagumo, K Takeda, S Asayama, S Yokogawa, K Imai, ... 2010 Symposium on VLSI Technology, 189-190, 2010 | 76 | 2010 |
| Electromigration performance of multi-level damascene copper interconnects S Yokogawa, N Okada, Y Kakuhara, H Takizawa Microelectronics Reliability 41 (9-10), 1409-1416, 2001 | 65 | 2001 |
| Scaling Impacts on Electromigration in Narrow Single‐Damascene Cu Interconnects S Yokogawa, H Tsuchiya AIP Conference Proceedings 741 (1), 124-134, 2004 | 54 | 2004 |
| Effects of Al doping on the electromigration performance of damascene Cu interconnects S Yokogawa, H Tsuchiya Journal of Applied Physics 101 (1), 2007 | 52 | 2007 |
| Electromigration lifetimes and void growth at low cumulative failure probability H Tsuchiya, S Yokogawa Microelectronics Reliability 46 (9-11), 1415-1420, 2006 | 41 | 2006 |
| Analysis of Al doping effects on resistivity and electromigration of copper interconnects S Yokogawa, H Tsuchiya, Y Kakuhara, K Kikuta IEEE Transactions on Device and Materials Reliability 8 (1), 216-221, 2008 | 40 | 2008 |
| An analysis of degradation data of a carbon film and properties of the estimators K Suzuki, K Maki, S Yokogawa Statistical Sciences and Data Analysis, 501-511, 1993 | 40 | 1993 |
| An approach to renewable-energy dominant grids via distributed electrical energy platform for IoT systems H Ichikawa, S Yokogawa, Y Kawakita, K Sawada, T Sogabe, A Minegishi, ... 2019 IEEE International Conference on Communications, Control, and Computing …, 2019 | 30 | 2019 |
| Electromigration-induced void growth kinetics in SiNx-passivated single-damascene Cu lines S Yokogawa Japanese journal of applied physics 43 (9R), 5990, 2004 | 29 | 2004 |
| Tradeoff characteristics between resistivity and reliability for scaled-down Cu-based interconnects S Yokogawa, K Kikuta, H Tsuchiya, T Takewaki, M Suzuki, H Toyoshima, ... IEEE transactions on electron devices 55 (1), 350-357, 2007 | 27 | 2007 |
| Method of predicting reliability of semiconductor device, reliability prediction system using the same and storage medium storing program causing computer to execute the same S Yokogawa US Patent 8,161,428, 2012 | 25 | 2012 |
| Statistics of breakdown field and time-dependent dielectric breakdown in contact-to-poly modules S Yokogawa, S Uno, I Kato, H Tsuchiya, T Shimizu, M Sakamoto 2011 International Reliability Physics Symposium, 2F. 4.1-2F. 4.6, 2011 | 23 | 2011 |
| Method of designing interconnects S Yokogawa US Patent 6,816,995, 2004 | 21 | 2004 |
| Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding M Kawano, T Fukase, Y Yamamoto, T Ito, S Yokogawa, H Tsuda, ... Proceedings of the IEEE 2003 International Interconnect Technology …, 2003 | 21 | 2003 |
| Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status L Chen, D Ando, Y Sutou, S Yokogawa, J Koike Applied Surface Science 497, 143810, 2019 | 20 | 2019 |
| Design apparatus of semiconductor device, design method of semiconductor device, and semiconductor device S Yokogawa US Patent App. 13/194,607, 2012 | 17 | 2012 |
| Statistical Analysis of Lifetime Distribution of Time-dependent Dielectric Breakdown in Cu/low-k Interconnects by Incorporation of Overlay Error Model S Yokogawa, H Tsuchiya Japanese Journal of Applied Physics 49 (5S2), 05FE01, 2010 | 15 | 2010 |
| Electromigration induced incubation, drift and threshold in single-damascene copper interconnects S Yokogawa, H Takizawa Proceedings of the IEEE 2002 International Interconnect Technology …, 2002 | 15 | 2002 |