| Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013 | 396 | 2013 |
| Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes AJ Trindade, D Massoubre, B Guilhabert, D Zhu, N Laurand, E Gu, ... 2013 IEEE Photonics Conference, 217-218, 2013 | 121 | 2013 |
| Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates P Tian, JJD McKendry, Z Gong, S Zhang, S Watson, D Zhu, IM Watson, ... Journal of Applied Physics 115 (3), 2014 | 115 | 2014 |
| Structure and chemistry of the Si (111)/AlN interface G Radtke, M Couillard, GA Botton, D Zhu, CJ Humphreys Applied Physics Letters 100 (1), 2012 | 81 | 2012 |
| Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing AJ Trindade, B Guilhabert, EY Xie, R Ferreira, JJD McKendry, D Zhu, ... Optics express 23 (7), 9329-9338, 2015 | 76 | 2015 |
| Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates AJ Trindade, B Guilhabert, D Massoubre, D Zhu, N Laurand, E Gu, ... Applied Physics Letters 103 (25), 2013 | 75 | 2013 |
| Scanning transmission electron microscopy investigation of the Si (111)/AlN interface grown by metalorganic vapor phase epitaxy G Radtke, M Couillard, GA Botton, D Zhu, CJ Humphreys Applied Physics Letters 97 (25), 2010 | 75 | 2010 |
| GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE D Zhu, C McAleese, KK McLaughlin, M Häberlen, CO Salcianu, EJ Thrush, ... Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2009 | 62 | 2009 |
| Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ... Journal of applied physics 109 (1), 2011 | 60 | 2011 |
| Analysis of defect-related localized emission processes in InGaN/GaN-based LEDs M Meneghini, S Vaccari, N Trivellin, D Zhu, C Humphreys, R Butendheich, ... IEEE transactions on electron devices 59 (5), 1416-1422, 2012 | 57 | 2012 |
| Dislocation reduction in MOVPE grown GaN layers on (111) Si using SiNx and AlGaN layers M Haeberlen, D Zhu, C McAleese, MJ Kappers, CJ Humphreys Journal of Physics: Conference Series 209 (1), 012017, 2010 | 51 | 2010 |
| Solid-state lighting based on light emitting diode technology D Zhu, CJ Humphreys Optics in our time, 87-118, 2016 | 48 | 2016 |
| Compositional inhomogeneity of a high-efficiency InxGa1− xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe MJ Galtrey, RA Oliver, MJ Kappers, C McAleese, D Zhu, CJ Humphreys, ... Applied Physics Letters 92 (4), 2008 | 47 | 2008 |
| High-speed substrate-emitting micro-light-emitting diodes for applications requiring high radiance PP Maaskant, H Shams, M Akhter, W Henry, MJ Kappers, D Zhu, ... Applied Physics Express 6 (2), 022102, 2013 | 45 | 2013 |
| Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping JT Griffiths, S Zhang, B Rouet-Leduc, WY Fu, A Bao, D Zhu, DJ Wallis, ... Nano letters 15 (11), 7639-7643, 2015 | 40 | 2015 |
| Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues M Calciati, M Goano, F Bertazzi, M Vallone, X Zhou, G Ghione, ... AIP Advances 4 (6), 2014 | 40 | 2014 |
| Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ... Journal of Applied Physics 113 (7), 2013 | 40 | 2013 |
| Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps DJ Wallis, D Zhu, F Oehler, SP Westwater, A Pujol, CJ Humphreys Semiconductor science and technology 28 (9), 094006, 2013 | 29 | 2013 |
| InGaN/GaN LEDs grown on Si (111): dependence of device performance on threading dislocation density and emission wavelength D Zhu, C McAleese, M Häberlen, C Salcianu, T Thrush, M Kappers, ... physica status solidi c 7 (7‐8), 2168-2170, 2010 | 28 | 2010 |
| Dislocation-related trap levels in nitride-based light emitting diodes G Venturi, A Castaldini, A Cavallini, M Meneghini, E Zanoni, D Zhu, ... Applied Physics Letters 104 (21), 2014 | 25 | 2014 |