| 2D materials: roadmap to CMOS integration C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018 | 105 | 2018 |
| Polarity control in WSe2 double-gate transistors GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ... Scientific reports 6 (1), 29448, 2016 | 97 | 2016 |
| Angle-dependent carrier transmission in graphene p–n junctions S Sutar, ES Comfort, J Liu, T Taniguchi, K Watanabe, JU Lee Nano letters 12 (9), 4460-4464, 2012 | 92 | 2012 |
| Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ... Advanced Materials Interfaces 3 (4), 1500635, 2016 | 81 | 2016 |
| From the metal to the channel: A study of carrier injection through the metal/2D MoS 2 interface G Arutchelvan, CJL de la Rosa, P Matagne, S Sutar, I Radu, ... Nanoscale 9 (30), 10869-10879, 2017 | 76 | 2017 |
| Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Q Zhang, S Sutar, T Kosel, A Seabaugh Solid-State Electronics 53 (1), 30-35, 2009 | 76 | 2009 |
| Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity D Chiappe, J Ludwig, A Leonhardt, S El Kazzi, AN Mehta, T Nuytten, ... Nanotechnology 29 (42), 425602, 2018 | 65 | 2018 |
| Reconfigurable pn junction diodes and the photovoltaic effect in exfoliated MoS2 films S Sutar, P Agnihotri, E Comfort, T Taniguchi, K Watanabe, J Ung Lee Applied Physics Letters 104 (12), 2014 | 59 | 2014 |
| Manifestation of chiral tunneling at a tilted graphene - junction RN Sajjad, S Sutar, JU Lee, AW Ghosh Physical Review B—Condensed Matter and Materials Physics 86 (15), 155412, 2012 | 56 | 2012 |
| Impact of device scaling on the electrical properties of MoS2 field-effect transistors G Arutchelvan, Q Smets, D Verreck, Z Ahmed, A Gaur, S Sutar, J Jussot, ... Scientific reports 11 (1), 6610, 2021 | 51 | 2021 |
| Challenges of wafer‐scale integration of 2D semiconductors for high‐performance transistor circuits T Schram, S Sutar, I Radu, I Asselberghs Advanced Materials 34 (48), 2109796, 2022 | 50 | 2022 |
| Introducing 2D-FETs in device scaling roadmap using DTCO Z Ahmed, A Afzalian, T Schram, D Jang, D Verreck, Q Smets, ... 2020 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2020 | 45 | 2020 |
| Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel D Lin, X Wu, D Cott, D Verreck, B Groven, S Sergeant, Q Smets, S Sutar, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2020 | 30 | 2020 |
| Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm S Subhechha, N Rassoul, A Belmonte, H Hody, H Dekkers, MJ van Setten, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 22 | 2022 |
| Sources of variability in scaled MoS2 FETs Q Smets, D Verreck, Y Shi, G Arutchelvan, B Groven, X Wu, S Sutar, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2020 | 21 | 2020 |
| Graphene based Van der Waals contacts on MoS2 field effect transistors V Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ME Boulon, ... 2D Materials 8 (1), 015003, 2020 | 20 | 2020 |
| Modulating the resistivity of MoS2 through low energy phosphorus plasma implantation K Haynes, R Murray, Z Weinrich, X Zhao, D Chiappe, S Sutar, I Radu, ... Applied Physics Letters 110 (26), 2017 | 18 | 2017 |
| Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel capacitance, 320µS/µm Gm and 420 µA/µm Id at 1V Vd/100nm Lg X Wu, D Cott, Z Lin, Y Shi, B Groven, P Morin, D Verreck, Q Smets, ... 2021 IEEE International Electron Devices Meeting (IEDM), 7.4. 1-7.4. 4, 2021 | 17 | 2021 |
| 2018 IEEE Int. Electron Devices Meeting (IEDM) C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ... IEEE, 2018 | 13 | 2018 |
| Bistable-body tunnel SRAM K Karda, S Sutar, JB Brockman, JJ Nahas, A Seabaugh IEEE Transactions on nanotechnology 11 (6), 1067-1072, 2010 | 13 | 2010 |
