| Lasing in direct-bandgap GeSn alloy grown on Si S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ... Nature photonics 9 (2), 88-92, 2015 | 1368 | 2015 |
| Si–Ge–Sn alloys: From growth to applications S Wirths, D Buca, S Mantl Progress in crystal growth and characterization of materials 62 (1), 1-39, 2016 | 296 | 2016 |
| Optically pumped GeSn microdisk lasers on Si D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ... ACS photonics 3 (7), 1279-1285, 2016 | 264 | 2016 |
| Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ... Applied physics letters 102 (19), 2013 | 196 | 2013 |
| Direct bandgap group IV epitaxy on Si for laser applications N Von Den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ... Chemistry of Materials 27 (13), 4693-4702, 2015 | 172 | 2015 |
| Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ... ACS photonics 2 (11), 1539-1545, 2015 | 106 | 2015 |
| Reduced pressure CVD growth of Ge and Ge1− xSnx alloys S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ... ECS Journal of Solid State Science and Technology 2 (5), N99, 2013 | 100 | 2013 |
| Study of GeSn based heterostructures: towards optimized group IV MQW LEDs D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ... Optics express 24 (2), 1358-1367, 2016 | 94 | 2016 |
| Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze Journal of crystal growth 384, 71-76, 2013 | 87 | 2013 |
| Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ... Applied physics letters 103 (26), 2013 | 86 | 2013 |
| Tensely strained GeSn alloys as optical gain media S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ... Applied physics letters 103 (19), 2013 | 86 | 2013 |
| Effect of Si-doping on InAs nanowire transport and morphology S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ... Journal of applied physics 110 (5), 2011 | 81 | 2011 |
| Room-temperature lasing from monolithically integrated GaAs microdisks on silicon S Wirths, BF Mayer, H Schmid, M Sousa, J Gooth, H Riel, KE Moselund ACS nano 12 (3), 2169-2175, 2018 | 80 | 2018 |
| SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications S Wirths, D Buca, Z Ikonic, P Harrison, AT Tiedemann, B Holländer, ... Thin Solid Films 557, 183-187, 2014 | 78 | 2014 |
| SiGeSn ternaries for efficient group IV heterostructure light emitters N von den Driesch, D Stange, S Wirths, D Rainko, I Povstugar, A Savenko, ... Small 13 (16), 1603321, 2017 | 73 | 2017 |
| High-mobility GaSb nanostructures cointegrated with InAs on Si M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ... ACS nano 11 (3), 2554-2560, 2017 | 72 | 2017 |
| Ballistic one-dimensional InAs nanowire cross-junction interconnects J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ... Nano letters 17 (4), 2596-2602, 2017 | 70 | 2017 |
| Towards Nanowire Tandem Junction Solar Cells on Silicon MT Borgström, MH Magnusson, F Dimroth, G Siefer, O Höhn, H Riel, ... IEEE Journal of Photovoltaics 8 (3), 733 - 740, 2018 | 69 | 2018 |
| Novel SiGe/Si line tunneling TFET with high Ion at low VDD and constant SS S Blaeser, S Glass, C Schulte-Braucks, K Narimani, NVD Driesch, ... 2015 IEEE international electron devices meeting (IEDM), 22.3. 1-22.3. 4, 2015 | 60 | 2015 |
| High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ... ACS applied materials & interfaces 7 (1), 62-67, 2015 | 60 | 2015 |
Gregor MusslerForschungszentrum JülichVerified email at fz-juelich.de