Articles with public access mandates - Agostino ApràLearn more
Not available anywhere: 4
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
Mandates: European Commission, Agence Nationale de la Recherche
Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures
E Catapano, A Aprà, M Cassé, F Gaillard, S de Franceschi, T Meunier, ...
Solid-State Electronics 193, 108291, 2022
Mandates: European Commission, Agence Nationale de la Recherche
Characterization and Lambert–W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures
E Catapano, A Aprà, M Cassé, F Gaillard, S de Franceschi, T Meunier, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
Mandates: European Commission, Agence Nationale de la Recherche
Dispersive vs charge-sensing readout for linear quantum registers
A Aprà, A Crippa, MLV Tagliaferri, J Li, R Ezzouch, B Bertrand, L Hutin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2020
Mandates: European Commission, Agence Nationale de la Recherche
Available somewhere: 4
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
SDF A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B ...
Nature Communications 10 (2776), 2019
Mandates: European Commission
A single hole spin with enhanced coherence in natural silicon
N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
Mandates: European Commission, Agence Nationale de la Recherche
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
R Ezzouch, S Zihlmann, VP Michal, J Li, A Aprá, B Bertrand, L Hutin, ...
Physical Review Applied 16 (3), 034031, 2021
Mandates: Swiss National Science Foundation, European Commission, Agence Nationale de …
Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature
E Catapano, G Ghibaudo, M Cassé, TM Frutuoso, BC Paz, T Bedecarrats, ...
IEEE Journal of the Electron Devices Society 9, 582-590, 2021
Mandates: European Commission, Agence Nationale de la Recherche
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