A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ... Nature communications 7 (1), 13575, 2016 | 648 | 2016 |
Single-donor ionization energies in a nanoscale CMOS channel M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto Nature nanotechnology 5 (2), 133-137, 2010 | 298 | 2010 |
Detection of doubled shot noise in short normal-metal/superconductor junctions X Jehl, M Sanquer, R Calemczuk, D Mailly Nature 405 (6782), 50-53, 2000 | 244 | 2000 |
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ... Nature communications 10 (1), 2776, 2019 | 151 | 2019 |
Gate-based high fidelity spin readout in a CMOS device M Urdampilleta, DJ Niegemann, E Chanrion, B Jadot, C Spence, ... Nature nanotechnology 14 (8), 737-741, 2019 | 150 | 2019 |
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ... Physical review letters 120 (13), 137702, 2018 | 146 | 2018 |
Cryogenic subthreshold swing saturation in FD-SOI MOSFETs described with band broadening H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, ... IEEE Electron Device Letters 40 (5), 784-787, 2019 | 132 | 2019 |
A two-atom electron pump B Roche, RP Riwar, B Voisin, E Dupont-Ferrier, R Wacquez, M Vinet, ... Nature Communications 4 (1), 1581, 2013 | 132 | 2013 |
Simple and controlled single electron transistor based on doping modulation in silicon nanowires M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus Applied physics letters 89 (14), 2006 | 132 | 2006 |
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ... Nano letters 14 (4), 2094-2098, 2014 | 121 | 2014 |
Electrical Control of g-Factor in a Few-Hole Silicon Nanowire MOSFET B Voisin, R Maurand, S Barraud, M Vinet, X Jehl, M Sanquer, J Renard, ... Nano letters 16 (1), 88-92, 2016 | 115 | 2016 |
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ... npj quantum information 4 (1), 6, 2018 | 111 | 2018 |
Coherent Coupling of Two Dopants in a Silicon Nanowire Probed<? format?> by Landau-Zener-Stückelberg Interferometry E Dupont-Ferrier, B Roche, B Voisin, X Jehl, R Wacquez, M Vinet, ... Physical review letters 110 (13), 136802, 2013 | 105 | 2013 |
Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy M Hofheinz, X Jehl, M Sanquer, G Molas, M Vinet, S Deleonibus The European Physical Journal B-Condensed Matter and Complex Systems 54, 299-307, 2006 | 103 | 2006 |
Andreev reflection enhanced shot noise in mesoscopic sns junctions X Jehl, P Payet-Burin, C Baraduc, R Calemczuk, M Sanquer Physical review letters 83 (8), 1660, 1999 | 102 | 1999 |
Dispersively detected Pauli spin-blockade in a silicon nanowire field-effect transistor AC Betz, R Wacquez, M Vinet, X Jehl, AL Saraiva, M Sanquer, ... Nano letters 15 (7), 4622-4627, 2015 | 96 | 2015 |
Few electron limit of n-type metal oxide semiconductor single electron transistors E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ... Nanotechnology 23 (21), 215204, 2012 | 88 | 2012 |
19.2 A 110mK 295µW 28nm FDSOI CMOS quantum integrated circuit with a 2.8 GHz excitation and nA current sensing of an on-chip double quantum dot L Le Guevel, G Billiot, X Jehl, S De Franceschi, M Zurita, Y Thonnart, ... 2020 IEEE International Solid-State Circuits Conference-(ISSCC), 306-308, 2020 | 85 | 2020 |
A single hole spin with enhanced coherence in natural silicon N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ... Nature Nanotechnology 17 (10), 1072-1077, 2022 | 84 | 2022 |
Hybrid metal-semiconductor electron pump for quantum metrology X Jehl, B Voisin, T Charron, P Clapera, S Ray, B Roche, M Sanquer, ... Physical Review X 3 (2), 021012, 2013 | 78 | 2013 |