| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 397 | 2021 |
| Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices? F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 260 | 2006 |
| Barrier-layer scaling of InAlN/GaN HEMTs F Medjdoub, M Alomari, JF Carlin, M Gonschorek, E Feltin, MA Py, ... IEEE Electron device letters 29 (5), 422-425, 2008 | 159 | 2008 |
| Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate F Medjdoub, J Derluyn, K Cheng, M Leys, S Degroote, D Marcon, D Visalli, ... IEEE electron device letters 31 (2), 111-113, 2010 | 145 | 2010 |
| Status of the emerging InAlN/GaN power HEMT technology F Medjdoub, JF Carlin, C Gaquière, N Grandjean, E Kohn The Open Electrical & Electronic Engineering Journal 2 (1), 2008 | 116 | 2008 |
| A comprehensive reliability investigation of the voltage-, temperature-and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs D Marcon, T Kauerauf, F Medjdoub, J Das, M Van Hove, P Srivastava, ... 2010 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2010 | 107 | 2010 |
| Gallium nitride (GaN): physics, devices, and technology F Medjdoub CRC Press, 2017 | 105 | 2017 |
| First demonstration of high-power GaN-on-silicon transistors at 40 GHz F Medjdoub, M Zegaoui, B Grimbert, D Ducatteau, N Rolland, PA Rolland IEEE electron device letters 33 (8), 1168-1170, 2012 | 105 | 2012 |
| High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation K Harrouche, R Kabouche, E Okada, F Medjdoub IEEE Journal of the Electron Devices Society 7, 1145-1150, 2019 | 99 | 2019 |
| High-performance low-leakage-current AlN/GaN HEMTs grown on silicon substrate F Medjdoub, M Zegaoui, D Ducatteau, N Rolland, PA Rolland IEEE Electron Device Letters 32 (7), 874-876, 2011 | 99 | 2011 |
| Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors F Medjdoub, M Zegaoui, B Grimbert, N Rolland, PA Rolland Applied Physics Express 4 (12), 124101, 2011 | 91 | 2011 |
| InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ... IEEE electron device letters 30 (11), 1131-1133, 2009 | 86 | 2009 |
| Characteristics of Al2O3/AlInN/GaN MOSHEMT F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ... Electronics letters 43 (12), 691-692, 2007 | 83 | 2007 |
| 1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal N Herbecq, I Roch-Jeune, N Rolland, D Visalli, J Derluyn, S Degroote, ... Applied Physics Express 7 (3), 034103, 2014 | 82 | 2014 |
| Enhancement mode semiconductor device J Derluyn, F Medjdoub, M Germain US Patent 8,309,987, 2012 | 77 | 2012 |
| Small-signal characteristics of AlInN/GaN HEMTs F Medjdoub, JF Carlin, M Gonschorek, MA Py, N Grandjean, ... Electronics Letters 42 (13), 779-780, 2006 | 62 | 2006 |
| Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4 J Derluyn, M Van Hove, D Visalli, A Lorenz, D Marcon, P Srivastava, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 54 | 2009 |
| Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices F Medjdoub, B Grimbert, D Ducatteau, N Rolland Applied Physics Express 6 (4), 044001, 2013 | 53 | 2013 |
| Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3 E Chikoidze, T Tchelidze, C Sartel, Z Chi, R Kabouche, I Madaci, C Rubio, ... Materials Today Physics 15, 100263, 2020 | 51 | 2020 |
| Above 2000 V breakdown voltage at 600 K GaN‐on‐silicon high electron mobility transistors N Herbecq, I Roch‐Jeune, A Linge, M Zegaoui, PO Jeannin, N Rouger, ... physica status solidi (a) 213 (4), 873-877, 2016 | 50 | 2016 |