Articles with public access mandates - David MoranLearn more
Available somewhere: 16
Surface transfer doping of diamond: A review
KG Crawford, I Maini, DA Macdonald, DAJ Moran
Progress in Surface Science 96 (1), 100613, 2021
Mandates: UK Engineering and Physical Sciences Research Council
Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ...
Applied Physics Letters 108 (4), 2016
Mandates: Australian Research Council, National Natural Science Foundation of China
Thermally stable, high performance transfer doping of diamond using transition metal oxides
KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ...
Scientific Reports 8 (1), 3342, 2018
Mandates: US Department of Defense, Australian Research Council, UK Engineering and …
RF operation of hydrogen-terminated diamond field effect transistors: A comparative study
S Russell, S Sharabi, A Tallaire, DAJ Moran
IEEE Transactions on Electron Devices 62 (3), 751-756, 2015
Mandates: UK Engineering and Physical Sciences Research Council
The direct hydrothermal deposition of cobalt-doped MoS 2 onto fluorine-doped SnO 2 substrates for catalysis of the electrochemical hydrogen evolution reaction
I Roger, R Moca, HN Miras, KG Crawford, DAJ Moran, AY Ganin, ...
Journal of Materials Chemistry A 5 (4), 1472-1480, 2017
Mandates: UK Engineering and Physical Sciences Research Council
Selective phase growth and precise-layer control in MoTe2
JP Fraser, L Masaityte, J Zhang, S Laing, JC Moreno-López, AF McKenzie, ...
Communications Materials 1 (1), 48, 2020
Mandates: Austrian Science Fund, UK Engineering and Physical Sciences Research Council …
The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond
KG Crawford, A Tallaire, X Li, DA Macdonald, D Qi, DAJ Moran
Diamond and Related Materials 84, 48-54, 2018
Mandates: Australian Research Council, UK Engineering and Physical Sciences Research …
High resolution structural characterisation of laser-induced defect clusters inside diamond
PS Salter, MJ Booth, A Courvoisier, DAJ Moran, DA MacLaren
Applied Physics Letters 111 (8), 2017
Mandates: UK Engineering and Physical Sciences Research Council
Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5as a Surface Electron Acceptor
DA Macdonald, KG Crawford, A Tallaire, R Issaoui, DAJ Moran
IEEE Electron Device Letters 39 (9), 1354-1357, 2018
Mandates: UK Engineering and Physical Sciences Research Council
Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification
AIM Greer, K Seunarine, AZ Khokhar, I MacLaren, AS Brydone, ...
Microelectronic engineering 112, 67-73, 2013
Mandates: UK Engineering and Physical Sciences Research Council, UK Medical Research …
Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐and Ni‐based gate stacks
K Floros, X Li, I Guiney, SJ Cho, D Hemakumara, DJ Wallis, E Wasige, ...
physica status solidi (a) 214 (8), 1600835, 2017
Mandates: UK Engineering and Physical Sciences Research Council
Assessing Challenges of 2D-Molybdenum Ditelluride for Efficient Hydrogen Generation in a Full-Scale Proton Exchange Membrane (PEM) Water Electrolyzer
A Kumar Samuel, AH Faqeeh, W Li, Z Ertekin, Y Wang, J Zhang, ...
ACS Sustainable Chemistry & Engineering 12 (3), 1276-1285, 2024
Mandates: UK Engineering and Physical Sciences Research Council
A Universal Platform for Selective Phase Growth and Precise-Layer Control in MoTe2
JP Fraser, L Masaityte, J Zhang, S Laing, JC Moreno-López, A McKenzie, ...
Mandates: Austrian Science Fund, UK Engineering and Physical Sciences Research Council
An HBr/Ar atomic layer etch process for precision gate recess etching of GaN-based transistors
X Li, K Floros, SJ Cho, D Hemakumara, I Guiney, D Moran, IG Thayne
Mandates: UK Engineering and Physical Sciences Research Council
Electrical characterisation of InAlN/AlGaN/GaN HEMT on Si substrate with varying InAlN thickness
K Florosa, X Lia, I Guineyb, SJ Choa, G Ternenta, D Hemakumaraa, ...
Mandates: UK Engineering and Physical Sciences Research Council
Development of an atomic layer etch process via repeated cycling of chloride formation in chlorine gas and its argon plasma removal for precision nanometer scale thin layer …
X Li, K Floros, SJ Cho, I Guiney, D Moran, IG Thayne
Mandates: UK Engineering and Physical Sciences Research Council
Publication and funding information is determined automatically by a computer program