| Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ... IEEE Electron Device Letters 28 (12), 1080-1082, 2007 | 230 | 2007 |
| Surface transfer doping of diamond: A review KG Crawford, I Maini, DA Macdonald, DAJ Moran Progress in Surface Science 96 (1), 100613, 2021 | 130 | 2021 |
| Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran Applied Physics Letters 103 (20), 2013 | 122 | 2013 |
| High mobility III-V MOSFETs for RF and digital applications M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ... 2007 IEEE International Electron Devices Meeting, 621-624, 2007 | 108 | 2007 |
| Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz SAO Russell, S Sharabi, A Tallaire, DAJ Moran IEEE Electron Device Letters 33 (10), 1471-1473, 2012 | 106 | 2012 |
| Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ... Applied Physics Letters 108 (4), 2016 | 102 | 2016 |
| 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/of 440 GHz and noise figure of 0.7 dB at 26 GHz K Elgaid, H McLelland, M Holland, DAJ Moran, CR Stanley, IG Thayne IEEE Electron Device Letters 26 (11), 784-786, 2005 | 81 | 2005 |
| Thermally stable, high performance transfer doping of diamond using transition metal oxides KG Crawford, D Qi, J McGlynn, TG Ivanov, PB Shah, J Weil, A Tallaire, ... Scientific Reports 8 (1), 3342, 2018 | 66 | 2018 |
| RF operation of hydrogen-terminated diamond field effect transistors: A comparative study S Russell, S Sharabi, A Tallaire, DAJ Moran IEEE Transactions on Electron Devices 62 (3), 751-756, 2015 | 57 | 2015 |
| Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions DAJ Moran, OJL Fox, H McLelland, S Russell, PW May IEEE electron device letters 32 (5), 599-601, 2011 | 53 | 2011 |
| The direct hydrothermal deposition of cobalt-doped MoS 2 onto fluorine-doped SnO 2 substrates for catalysis of the electrochemical hydrogen evolution reaction I Roger, R Moca, HN Miras, KG Crawford, DAJ Moran, AY Ganin, ... Journal of Materials Chemistry A 5 (4), 1472-1480, 2017 | 47 | 2017 |
| 1 µm gate length, In0. 75Ga0. 25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 µS/μm RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, ... Electronics Letters 44 (7), 498-500, 2008 | 39* | 2008 |
| 50-nm self-aligned and “standard” T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node DAJ Moran, H McLelland, K Elgaid, G Whyte, CR Stanley, I Thayne IEEE Transactions on Electron Devices 53 (12), 2920-2925, 2006 | 37 | 2006 |
| Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Y Chen, DS Macintyre, X Cao, E Boyd, D Moran, H McLelland, M Holland, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 37 | 2003 |
| Selective phase growth and precise-layer control in MoTe2 JP Fraser, L Masaityte, J Zhang, S Laing, JC Moreno-López, AF McKenzie, ... Communications Materials 1 (1), 48, 2020 | 35 | 2020 |
| Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography Y Chen, D Macintyre, E Boyd, D Moran, I Thayne, S Thoms Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 35 | 2002 |
| The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond KG Crawford, A Tallaire, X Li, DA Macdonald, D Qi, DAJ Moran Diamond and Related Materials 84, 48-54, 2018 | 26 | 2018 |
| Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices GW Paterson, JA Wilson, D Moran, R Hill, AR Long, I Thayne, M Passlack, ... Materials Science and Engineering: B 135 (3), 277-281, 2006 | 26 | 2006 |
| Self-aligned 0.12/spl mu/m T-gate In/sub. 53/Ga/sub. 47/As/In/sub. 52/Al/sub. 48/As HEMT technology utilising a non-annealed ohmic contact strategy DAJ Moran, K Kalna, E Boyd, F McEwan, H McLelland, LL Zhuang, ... ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003 | 26 | 2003 |
| High resolution structural characterisation of laser-induced defect clusters inside diamond PS Salter, MJ Booth, A Courvoisier, DAJ Moran, DA MacLaren Applied Physics Letters 111 (8), 2017 | 25 | 2017 |