| Improving performance of organic solar cells using amorphous tungsten oxides as an interfacial buffer layer on transparent anodes S Han, WS Shin, M Seo, D Gupta, SJ Moon, S Yoo Organic Electronics 10 (5), 791-797, 2009 | 314 | 2009 |
| First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications M Seo, MH Kang, SB Jeon, H Bae, J Hur, BC Jang, S Yun, S Cho, WK Kim, ... IEEE Electron Device Letters 39 (9), 1445-1448, 2018 | 152 | 2018 |
| Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET JK Han, M Seo, WK Kim, MS Kim, SY Kim, MS Kim, GJ Yun, GB Lee, ... IEEE Electron Device Letters 41 (2), 208-211, 2019 | 84 | 2019 |
| Realization of efficient semitransparent organic photovoltaic cells with metallic top electrodes: utilizing the tunable absorption asymmetry D Han, H Kim, S Lee, M Seo, S Yoo Optics express 18 (104), A513-A521, 2010 | 52 | 2010 |
| All‐solid‐state ion synaptic transistor for Wafer‐scale integration with electrolyte of a nanoscale thickness JM Yu, C Lee, DJ Kim, H Park, JK Han, J Hur, JK Kim, MS Kim, M Seo, ... Advanced Functional Materials 31 (23), 2010971, 2021 | 51 | 2021 |
| A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor J Hur, BC Jang, J Park, DI Moon, H Bae, JY Park, GH Kim, SB Jeon, ... Advanced Functional Materials 28 (47), 1804844, 2018 | 43 | 2018 |
| Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ... ACS nano 11 (12), 12547-12552, 2017 | 38 | 2017 |
| Bioinspired polydopamine‐based resistive‐switching memory on cotton fabric for wearable neuromorphic device applications H Bae, D Kim, M Seo, IK Jin, SB Jeon, HM Lee, SH Jung, BC Jang, G Son, ... Advanced Materials Technologies 4 (8), 1900151, 2019 | 37 | 2019 |
| A single transistor neuron with independently accessed double-gate for excitatory-inhibitory function and tunable firing threshold voltage JK Han, M Seo, JM Yu, YJ Suh, YK Choi IEEE Electron Device Letters 41 (8), 1157-1160, 2020 | 34 | 2020 |
| Tungsten oxide as a buffer layer inserted at the SnO2/pa-SiC interface of pin-type amorphous silicon based solar cells L Fang, SJ Baik, KS Lim, SH Yoo, MS Seo, SJ Kang, J Won Seo Applied Physics Letters 96 (19), 2010 | 19 | 2010 |
| Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC – Characterization DH Kim, SK Lim, H Bae, CK Kim, SW Lee, M Seo, SY Kim, KM Hwang, ... IEEE Transactions on Electron Devices 65 (4), 1640-1644, 2018 | 18 | 2018 |
| Fullerene‐Derivative‐Embedded Nanogap Field‐Effect‐Transistor and Its Nonvolatile Memory Application SW Ryu, CJ Kim, S Kim, M Seo, C Yun, S Yoo, YK Choi small 6 (15), 1617-1621, 2010 | 17 | 2010 |
| Effect of annealing temperature on minimum domain size of ferroelectric hafnia S Yun, H Kim, M Seo, MH Kang, T Kim, S Cho, MH Park, S Jeon, YK Choi, ... ACS Applied Electronic Materials 6 (4), 2134-2141, 2024 | 8 | 2024 |
| Comprehensive study on the relation between low-frequency noise and asymmetric parasitic resistances in a vertical pillar-type FET SW Lee, T Bang, CK Kim, KM Hwang, BC Jang, DI Moon, H Bae, M Seo, ... IEEE Electron Device Letters 38 (8), 1008-1011, 2017 | 8 | 2017 |
| Electro-Thermal Erasing at 104-Fold Faster Speeds in Charge-Trap Flash Memory MS Kim, DC Ahn, JY Park, M Seo, SY Kim, WK Kim, DH Yun, YK Choi IEEE Electron Device Letters 40 (2), 196-199, 2018 | 7 | 2018 |
| Synaptic segmented transistor with improved linearity by Schottky junctions and accelerated speed by double-layered nitride SY Kim, JM Yu, GS Lee, DH Yun, MS Kim, JK Kim, DJ Kim, GB Lee, ... ACS Applied Materials & Interfaces 14 (28), 32261-32269, 2022 | 6 | 2022 |
| Ternary logic decoder using independently controlled double-gate Si-NW MOSFETs SJ Han, JK Han, MS Kim, GJ Yun, JM Yu, IW Tcho, M Seo, GB Lee, ... Scientific reports 11 (1), 13018, 2021 | 5 | 2021 |
| A steep-slope phenomenon by gate charge pumping in a MOSFET MS Kim, GJ Yun, WK Kim, M Seo, DJ Kim, JM Yu, JK Han, J Hur, GB Lee, ... IEEE Electron Device Letters 43 (4), 521-524, 2022 | 2 | 2022 |
| Visualization of domain structure and switching properties of Hf0. 5Zr0. 5O2 at various annealing temperatures for integrated ferroelectrics SJ Yun, YK Choi, H Kim, M Seo, MH Kang, SB Hong The 6th International Conference on Electronic Materials and Nanotechnology …, 2020 | | 2020 |
| Effect of Additional Annealing on Ferroelectric Hafnium MS Seo, MH Kang, TH Kim, YI Goh, SH Jeon, YK Choi ICEIC 2020, 2020 | | 2020 |
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTVerified email at ee.kaist.ac.kr