Articles with public access mandates - Andreas BeyerLearn more
Not available anywhere: 50
GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration
K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz
Journal of Crystal Growth 315 (1), 37-47, 2011
Mandates: German Research Foundation
A highly efficient directional molecular white-light emitter driven by a continuous-wave laser diode
NW Rosemann, JP Eußner, A Beyer, SW Koch, K Volz, S Dehnen, ...
Science 352 (6291), 1301-1304, 2016
Mandates: US National Science Foundation, German Research Foundation
GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz
Journal of Applied Physics 111 (8), 2012
Mandates: German Research Foundation
The Role of Intragranular Nanopores in Capacity Fade of Nickel-Rich Layered Li(Ni1–x–yCoxMny)O2 Cathode Materials
S Ahmed, A Pokle, S Schweidler, A Beyer, M Bianchini, F Walther, ...
ACS nano 13 (9), 10694-10704, 2019
Mandates: Helmholtz Association, Federal Ministry of Education and Research, Germany
In situ verification of single-domain III-V on Si (100) growth via metal-organic vapor phase epitaxy
H Döscher, T Hannappel, B Kunert, A Beyer, K Volz, W Stolz
Applied Physics Letters 93 (17), 2008
Mandates: German Research Foundation
MOVPE grown gallium phosphide–silicon heterojunction solar cells
M Feifel, J Ohlmann, J Benick, T Rachow, S Janz, M Hermle, F Dimroth, ...
IEEE Journal of Photovoltaics 7 (2), 502-507, 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Influence of crystal polarity on crystal defects in GaP grown on exact Si (001)
A Beyer, I Németh, S Liebich, J Ohlmann, W Stolz, K Volz
Journal of Applied Physics 109 (8), 2011
Mandates: German Research Foundation
STEMsalabim: A high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens
JO Oelerich, L Duschek, J Belz, A Beyer, SD Baranovskii, K Volz
Ultramicroscopy 177, 91-96, 2017
Mandates: German Research Foundation
Indirect in situ characterization of Si (1 0 0) substrates at the initial stage of III–V heteroepitaxy
H Döscher, O Supplie, S Brückner, T Hannappel, A Beyer, J Ohlmann, ...
Journal of Crystal Growth 315 (1), 16-21, 2011
Mandates: German Research Foundation
Pyramidal structure formation at the interface between III/V semiconductors and silicon
A Beyer, A Stegmüller, JO Oelerich, K Jandieri, K Werner, G Mette, ...
Chemistry of Materials 28 (10), 3265-3275, 2016
Mandates: German Research Foundation
In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si (100)
H Döscher, B Kunert, A Beyer, O Supplie, K Volz, W Stolz, T Hannappel
Journal of Vacuum Science & Technology B 28 (4), C5H1-C5H6, 2010
Mandates: German Research Foundation
Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates
W Guo, Y Mols, J Belz, A Beyer, K Volz, A Schulze, R Langer, B Kunert
Journal of Applied Physics 122 (2), 2017
Mandates: German Research Foundation, Federal Ministry of Education and Research, Germany
Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)
E Sterzer, A Beyer, L Duschek, L Nattermann, B Ringler, B Leube, ...
Journal of Crystal Growth 439, 19-27, 2016
Mandates: German Research Foundation
Local Bi ordering in MOVPE grown Ga (As, Bi) investigated by high resolution scanning transmission electron microscopy
A Beyer, N Knaub, P Rosenow, K Jandieri, P Ludewig, L Bannow, ...
Applied Materials Today 6, 22-28, 2017
Mandates: German Research Foundation
Interface morphology and composition of Ga (NAsP) quantum well structures for monolithically integrated LASERs on silicon substrates
T Wegele, A Beyer, P Ludewig, P Rosenow, L Duschek, K Jandieri, ...
Journal of Physics D: Applied Physics 49 (7), 075108, 2016
Mandates: German Research Foundation
Influence of spatial and temporal coherences on atomic resolution high angle annular dark field imaging
A Beyer, J Belz, N Knaub, K Jandieri, K Volz
Ultramicroscopy 169, 1-10, 2016
Mandates: German Research Foundation
Metastable cubic zinc-blende III/V semiconductors: growth and structural characteristics
A Beyer, W Stolz, K Volz
Progress in Crystal Growth and Characterization of Materials 61 (2-4), 46-62, 2015
Mandates: German Research Foundation
Tailoring the diameter of electrospun layered perovskite nanofibers for photocatalytic water splitting
A Bloesser, P Voepel, MO Loeh, A Beyer, K Volz, R Marschall
Journal of Materials Chemistry A 6 (5), 1971-1978, 2018
Mandates: German Research Foundation
Local sample thickness determination via scanning transmission electron microscopy defocus series
A Beyer, R Straubinger, J Belz, K Volz
Journal of Microscopy 262 (2), 171-177, 2016
Mandates: German Research Foundation
Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
L Duschek, P Kükelhan, A Beyer, S Firoozabadi, JO Oelerich, C Fuchs, ...
Ultramicroscopy 200, 84-96, 2019
Mandates: German Research Foundation, European Commission, Government of Italy
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