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Arsalan Pourkabirian
Arsalan Pourkabirian
Low Noise Factory
Verified email at lownoisefactory.com - Homepage
Title
Cited by
Cited by
Year
Observation of the dynamical Casimir effect in a superconducting circuit
CM Wilson, G Johansson, A Pourkabirian, M Simoen, JR Johansson, ...
nature 479 (7373), 376-379, 2011
11752011
Probing the quantum vacuum with an artificial atom in front of a mirror
IC Hoi, AF Kockum, L Tornberg, A Pourkabirian, G Johansson, P Delsing, ...
Nature Physics 11, 1045–1049, 2015
1632015
InP HEMTs for sub-mW cryogenic low-noise amplifiers
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn
IEEE Electron Device Letters 41 (7), 1005-1008, 2020
732020
0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers
E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ...
IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018
682018
A 300-µW cryogenic HEMT LNA for quantum computing
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Grahn
2020 IEEE/MTT-S International Microwave Symposium (IMS), 1299-1302, 2020
492020
Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-and Q-band LNAs
E Cha, G Moschetti, N Wadefalk, PÅ Nilsson, S Bevilacqua, ...
IEEE Transactions on Microwave Theory and Techniques 65 (12), 5171-5180, 2017
352017
Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor
A Pourkabirian, MV Gustafsson, G Johansson, J Clarke, P Delsing
Physical Review Letters 113 (25), 256801, 2014
292014
Thermal properties of charge noise sources
MV Gustafsson, A Pourkabirian, G Johansson, J Clarke, P Delsing
Physical Review B—Condensed Matter and Materials Physics 88 (24), 245410, 2013
28*2013
Cryogenic W-band LNA for ALMA band 2+ 3 with average noise temperature of 24 K
Y Tang, N Wadefalk, JW Kooi, J Schleeh, G Moschetti, PÅ Nilsson, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 176-179, 2017
172017
Cryogenic LNAs for SKA band 2 to 5
J Schleeh, G Moschetti, N Wadefalk, E Cha, A Pourkabirian, G Alestig, ...
2017 IEEE MTT-S International Microwave Symposium (IMS), 164-167, 2017
172017
Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation
E Cha, N Wadefalk, G Moschetti, A Pourkabirian, J Stenarson, J Li, ...
IEEE Transactions on Electron Devices 70 (5), 2431-2436, 2023
132023
Influence of spacer thickness on the noise performance in InP HEMTs for cryogenic LNAs
J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn
IEEE Electron Device Letters 43 (7), 1029-1032, 2022
122022
On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field
IH Rodrigues, D Niepce, A Pourkabirian, G Moschetti, J Schleeh, T Bauch, ...
AIP Advances 9 (8), 2019
112019
III-V HEMTs for cryogenic low noise amplifiers
J Grahn, E Cha, A Pourkabirian, J Stenarson, N Wadefalk
2020 IEEE International Electron Devices Meeting (IEDM), 25.6. 1-25.6. 4, 2020
102020
Cryogenic low noise amplifiers in an InP HEMT MMIC process
PÅ Nilsson, A Pourkabirian, J Schleeh, N Wadefalk, JP Starski, G Alestig, ...
2015 Asia-Pacific Microwave Conference (APMC) 1, 1-3, 2015
62015
Cryogenic low-noise InP HEMTs: A source-drain distance study
E Cha, A Pourkabirian, J Schleeh, N Wadefalk, G Moschetti, JP Starski, ...
2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016
52016
On the relation between rf noise and subthreshold swing in InP HEMTs for cryogenic LNAs
J Li, A Pourkabirian, J Bergsten, N Wadefalk, J Grahn
2022 Asia-Pacific Microwave Conference (APMC), 10-12, 2022
42022
Probing quantum and classical noise in nano circuits
A Pourkabirian
PQDT-Global, 2014
12014
Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content
J Li, J Bergsten, A Pourkabirian, J Grahn
IEEE Journal of the Electron Devices Society, 2024
2024
Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers under a magnetic field
IH Rodrigues, D Niepce, G Moschetti, A Pourkabirian, J Schleeh, T Bauch, ...
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019
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