| On the bulk β-Ga2O3 single crystals grown by the Czochralski method Z Galazka, K Irmscher, R Uecker, R Bertram, M Pietsch, A Kwasniewski, ... Journal of Crystal Growth 404, 184-191, 2014 | 696 | 2014 |
| 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters 37 (7), 902-905, 2016 | 614 | 2016 |
| Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method K Irmscher, Z Galazka, M Pietsch, R Uecker, R Fornari Journal of Applied Physics 110 (6), 2011 | 596 | 2011 |
| Czochralski growth and characterization of β‐Ga2O3 single crystals Z Galazka, R Uecker, K Irmscher, M Albrecht, D Klimm, M Pietsch, ... Crystal Research and Technology 45 (12), 1229-1236, 2010 | 548 | 2010 |
| Experimental electronic structure of In2O3 and Ga2O3 C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ... New Journal of Physics 13 (8), 085014, 2011 | 418 | 2011 |
| Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method Z Galazka, R Uecker, D Klimm, K Irmscher, M Naumann, M Pietsch, ... ECS Journal of Solid State Science and Technology 6 (2), Q3007, 2016 | 398 | 2016 |
| Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3 M Mohamed, K Irmscher, C Janowitz, Z Galazka, R Manzke, R Fornari Applied Physics Letters 101 (13), 2012 | 379 | 2012 |
| Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016 | 310 | 2016 |
| Hydrogen-related deep levels in proton-bombarded silicon K Irmscher, H Klose, K Maass Journal of Physics C: Solid State Physics 17 (35), 6317, 1984 | 190 | 1984 |
| Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ... Journal of Crystal Growth 401, 665-669, 2014 | 184 | 2014 |
| Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ... Journal of Materials Science 51, 3650-3656, 2016 | 169 | 2016 |
| On the nature and temperature dependence of the fundamental band gap of In2O3 K Irmscher, M Naumann, M Pietsch, Z Galazka, R Uecker, T Schulz, ... physica status solidi (a) 211 (1), 54-58, 2014 | 133 | 2014 |
| Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting R Schewski, K Lion, A Fiedler, C Wouters, A Popp, SV Levchenko, ... Apl Materials 7 (2), 2019 | 119 | 2019 |
| Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ... Journal of Applied Physics 120 (22), 2016 | 115 | 2016 |
| Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ... Journal of Applied Physics 122 (16), 2017 | 114 | 2017 |
| Formation of the deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation I Pintilie, L Pintilie, K Irmscher, B Thomas Applied physics letters 81 (25), 4841-4843, 2002 | 113 | 2002 |
| Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions Z Galazka, K Irmscher, R Schewski, IM Hanke, M Pietsch, S Ganschow, ... Journal of Crystal Growth 529, 125297, 2020 | 109 | 2020 |
| Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al Z Galazka, S Ganschow, A Fiedler, R Bertram, D Klimm, K Irmscher, ... Journal of Crystal Growth 486, 82-90, 2018 | 108 | 2018 |
| Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals Z Galazka, S Ganschow, R Schewski, K Irmscher, D Klimm, ... APL Materials 7 (2), 2019 | 106 | 2019 |
| Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE S Bin Anooz, R Grüneberg, C Wouters, R Schewski, M Albrecht, A Fiedler, ... Applied Physics Letters 116 (18), 2020 | 91 | 2020 |
