Articles with public access mandates - Amritesh RaiLearn more
Not available anywhere: 5
Activation of a nickel-based oxygen evolution reaction catalyst on a hematite photoanode via incorporation of cerium for photoelectrochemical water oxidation
H Lim, JY Kim, EJ Evans, A Rai, JH Kim, BR Wygant, CB Mullins
ACS applied materials & interfaces 9 (36), 30654-30661, 2017
Mandates: US National Science Foundation, US Department of Energy
Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano Letters 16 (8), 4975-4981, 2016
Mandates: US National Science Foundation, UK Natural Environment Research Council
Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit
R Dey, A Roy, T Pramanik, S Guchhait, S Sonde, A Rai, LF Register, ...
Journal of Applied Physics 120 (16), 2016
Mandates: US National Science Foundation
Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F
W Hsu, T Kim, A Benítez-Lara, H Chou, A Dolocan, A Rai, ...
Journal of Applied Physics 120 (1), 2016
Mandates: US National Science Foundation
Novel BF+Implantation for High Performance Ge pMOSFETs
W Hsu, T Kim, H Chou, A Rai, SK Banerjee
IEEE Electron Device Letters 37 (8), 954-957, 2016
Mandates: US National Science Foundation
Available somewhere: 19
Evidence for moiré excitons in van der Waals heterostructures
K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ...
Nature 567 (7746), 71-75, 2019
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
Mandates: US National Science Foundation
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime
HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ...
Advanced Materials 28 (9), 1818-1823, 2016
Mandates: US National Science Foundation
Radio frequency transistors and circuits based on CVD MoS2
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
Mandates: UK Natural Environment Research Council
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee
Crystals 8 (8), 316, 2018
Mandates: US National Science Foundation
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
Mandates: US National Science Foundation
Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2
Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ...
Advanced Materials 32 (22), 1908311, 2020
Mandates: US National Science Foundation
Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ...
Nano letters 19 (3), 1976-1981, 2019
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Carrier trapping by oxygen impurities in molybdenum diselenide
K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ...
ACS applied materials & interfaces 10 (1), 1125-1131, 2018
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
K Chen, A Roy, A Rai, HCP Movva, X Meng, F He, SK Banerjee, Y Wang
APL Materials 6 (5), 2018
Mandates: US National Science Foundation, US Department of Energy, US Department of …
Towards band structure and band offset engineering of monolayer Mo (1− x) W (x) S2 via Strain
JS Kim, R Ahmad, T Pandey, A Rai, S Feng, J Yang, Z Lin, M Terrones, ...
2D Materials 5 (1), 015008, 2017
Mandates: US National Science Foundation, US Department of Defense, Department of …
Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization
JH Park, A Rai, J Hwang, C Zhang, I Kwak, SF Wolf, S Vishwanath, X Liu, ...
ACS nano 13 (7), 7545-7555, 2019
Mandates: US National Science Foundation, US Department of Defense
Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy
T Pramanik, A Roy, R Dey, A Rai, S Guchhait, HCP Movva, CC Hsieh, ...
Journal of Magnetism and Magnetic Materials 437, 72-77, 2017
Mandates: US National Science Foundation
Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors
S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee
Journal of Applied Physics 119 (12), 2016
Mandates: US National Science Foundation
Contact Engineering of Layered MoS2 via Chemically Dipping Treatments
S Bang, S Lee, A Rai, NT Duong, I Kawk, S Wolf, CH Chung, SK Banerjee, ...
Advanced Functional Materials 30 (16), 2000250, 2020
Mandates: US National Science Foundation, US Department of Defense
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