| Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003 | 343 | 2003 |
| Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005 | 270 | 2005 |
| Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering ME Vickers, MJ Kappers, TM Smeeton, EJ Thrush, JS Barnard, ... Journal of applied physics 94 (3), 1565-1574, 2003 | 150 | 2003 |
| In-plane imperfections in GaN studied by x-ray diffraction ME Vickers, MJ Kappers, R Datta, C McAleese, TM Smeeton, ... Journal of Physics D: Applied Physics 38 (10A), A99, 2005 | 123 | 2005 |
| The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy. TM Smeeton, CJ Humphreys, JS Barnard, MJ Kappers Journal of materials science 41 (9), 2006 | 57 | 2006 |
| Strong carrier confinement in quantum dots grown by molecular beam epitaxy M Sénès, KL Smith, TM Smeeton, SE Hooper, J Heffernan Physical Review B—Condensed Matter and Materials Physics 75 (4), 045314, 2007 | 46 | 2007 |
| Head mounted display using spatial light modulator to move the viewing zone KH Tam, DJ Montgomery, TM Smeeton US Patent App. 15/060,957, 2017 | 45 | 2017 |
| Design of a creep resistant nickel base superalloy for power plant applications: Part 3-Experimental results F Tancret, T Sourmail, MA Yescas, RW Evans, C McAleese, L Singh, ... Materials Science and Technology 19 (3), 296-302, 2003 | 45 | 2003 |
| Degradation of InGaN∕ GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings M Rossetti, TM Smeeton, WS Tan, M Kauer, SE Hooper, J Heffernan, ... Applied Physics Letters 92 (15), 2008 | 40 | 2008 |
| Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy M Kauer, SE Hooper, V Bousquet, K Johnson, C Zellweger, JM Barnes, ... Electronics Letters 41 (13), 739-741, 2005 | 40 | 2005 |
| Analysis of InGaN/GaN single quantum wells by X‐ray scattering and transmission electron microscopy TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys physica status solidi (b) 240 (2), 297-300, 2003 | 38 | 2003 |
| Semiconductor device and a method of manufacture thereof TM Smeeton, KL Smith, MX Sénès, SE Hooper US Patent 8,334,157, 2012 | 31 | 2012 |
| Breath analyser and detection methods S Rihani, TM Smeeton US Patent 9,568,465, 2017 | 29 | 2017 |
| Synthesis of widely tunable and highly luminescent zinc nitride nanocrystals PN Taylor, MA Schreuder, TM Smeeton, AJD Grundy, JAR Dimmock, ... Journal of Materials Chemistry C 2 (22), 4379-4382, 2014 | 26 | 2014 |
| Deep ultraviolet (UVC) laser for sterilisation and fluorescence applications EA Boardman, LSW Huang, JJ Robson-Hemmings, TM Smeeton, ... Sharp technical report, 31, 2012 | 24 | 2012 |
| 36‐4: Solution‐Processed Transparent Top Electrode for QD‐LED HT Hopkin, EA Boardman, TM Smeeton SID Symposium Digest of Technical Papers 51 (1), 516-519, 2020 | 23 | 2020 |
| Active matrix QD‐LED with top emission structure by UV lithography for RGB patterning Y Nakanishi, T Takeshita, Y Qu, H Imabayashi, S Okamoto, H Utsumi, ... Journal of the Society for Information Display 28 (6), 499-508, 2020 | 22 | 2020 |
| Sterilizing apparatus J Mori, TM Smeeton US Patent 10,307,495, 2019 | 21 | 2019 |
| AlInGaN light-emitting device KL Smith, MX Sénès, TM Smeeton, SE Hooper US Patent 7,858,962, 2010 | 21 | 2010 |
| Touch sensor for display with shield N Clark, TM Smeeton US Patent 10,452,201, 2019 | 19 | 2019 |