| First demonstration of a logic-process compatible junctionless ferroelectric FinFET synapse for neuromorphic applications M Seo, MH Kang, SB Jeon, H Bae, J Hur, BC Jang, S Yun, S Cho, WK Kim, ... IEEE Electron Device Letters 39 (9), 1445-1448, 2018 | 152 | 2018 |
| Direct observation of a carbon filament in water-resistant organic memory BH Lee, H Bae, H Seong, DI Lee, H Park, YJ Choi, SG Im, SO Kim, ... ACS nano 9 (7), 7306-7313, 2015 | 105 | 2015 |
| Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment S Kang, WS Jang, AN Morozovska, O Kwon, Y Jin, YH Kim, H Bae, ... Science 376 (6594), 731-738, 2022 | 101 | 2022 |
| Functional circuitry on commercial fabric via textile-compatible nanoscale film coating process for fibertronics H Bae, BC Jang, H Park, SH Jung, HM Lee, JY Park, SB Jeon, G Son, ... Nano letters 17 (10), 6443-6452, 2017 | 74 | 2017 |
| Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam, YS Lee, J Heo Materials Today 50, 8-15, 2021 | 67 | 2021 |
| High Performance -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate J Noh, S Alajlouni, MJ Tadjer, JC Culbertson, H Bae, M Si, H Zhou, ... IEEE Journal of the Electron Devices Society 7, 914-918, 2019 | 59 | 2019 |
| Single-scan monochromatic photonic capacitance-voltage technique for extraction of subgap DOS over the bandgap in amorphous semiconductor TFTs H Bae, H Choi, S Jun, C Jo, YH Kim, JS Hwang, J Ahn, S Oh, JU Bae, ... IEEE Electron Device Letters 34 (12), 1524-1526, 2013 | 55 | 2013 |
| Self-sustainable wind speed sensor system with omni-directional wind based triboelectric generator SJ Park, SH Lee, ML Seol, SB Jeon, H Bae, D Kim, GH Cho, YK Choi Nano Energy 55, 115-122, 2019 | 47 | 2019 |
| Foldable and disposable memory on paper BH Lee, DI Lee, H Bae, H Seong, SB Jeon, ML Seol, JW Han, ... Scientific Reports 6 (1), 38389, 2016 | 46 | 2016 |
| A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor J Hur, BC Jang, J Park, DI Moon, H Bae, JY Park, GH Kim, SB Jeon, ... Advanced Functional Materials 28 (47), 1804844, 2018 | 43 | 2018 |
| Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric D Lee, J Yoon, J Lee, BH Lee, ML Seol, H Bae, SB Jeon, H Seong, SG Im, ... Scientific reports 6 (1), 26121, 2016 | 42 | 2016 |
| Self-curable gate-all-around MOSFETs using electrical annealing to repair degradation induced from hot-carrier injection JY Park, DI Moon, ML Seol, CK Kim, CH Jeon, H Bae, T Bang, YK Choi IEEE Transactions on Electron Devices 63 (3), 910-915, 2016 | 42 | 2016 |
| Physically transient memory on a rapidly dissoluble paper for security application H Bae, BH Lee, D Lee, ML Seol, D Kim, JW Han, CK Kim, SB Jeon, D Ahn, ... Scientific Reports 6 (1), 38324, 2016 | 39 | 2016 |
| Modified conductance method for extraction of subgap density of states in a-IGZO thin-film transistors H Bae, S Jun, CH Jo, H Choi, J Lee, YH Kim, S Hwang, HK Jeong, I Hur, ... IEEE electron device letters 33 (8), 1138-1140, 2012 | 39 | 2012 |
| Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction H Bae, A Charnas, X Sun, J Noh, M Si, W Chung, G Qiu, X Lyu, ... ACS omega 4 (24), 20756-20761, 2019 | 38 | 2019 |
| Nanoscale FET-based transduction toward sensitive extended-gate biosensors J Kwon, BH Lee, SY Kim, JY Park, H Bae, YK Choi, JH Ahn ACS sensors 4 (6), 1724-1729, 2019 | 38 | 2019 |
| Nano-electromechanical switch based on a physical unclonable function for highly robust and stable performance in harsh environments KM Hwang, JY Park, H Bae, SW Lee, CK Kim, M Seo, H Im, DH Kim, ... ACS nano 11 (12), 12547-12552, 2017 | 38 | 2017 |
| Bioinspired polydopamine‐based resistive‐switching memory on cotton fabric for wearable neuromorphic device applications H Bae, D Kim, M Seo, IK Jin, SB Jeon, HM Lee, SH Jung, BC Jang, G Son, ... Advanced Materials Technologies 4 (8), 1900151, 2019 | 37 | 2019 |
| Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance H Bae, SG Nam, T Moon, Y Lee, S Jo, DH Choe, S Kim, KH Lee, J Heo 2020 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2020 | 36 | 2020 |
| Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through – Characterization H Bae, S Kim, M Bae, JS Shin, D Kong, H Jung, J Jang, J Lee, DH Kim, ... IEEE Electron Device Letters 32 (6), 761-763, 2011 | 36 | 2011 |
Yang-Kyu ChoiProfessor of Electrical Engineering, KAISTVerified email at ee.kaist.ac.kr