Spin pumping at the magnetic insulator (YIG)/normal metal (Au) interfaces B Heinrich, C Burrowes, E Montoya, B Kardasz, E Girt, YY Song, Y Sun, ... Physical review letters 107 (6), 066604, 2011 | 513 | 2011 |
Damping in yttrium iron garnet nanoscale films capped by platinum Y Sun, H Chang, M Kabatek, YY Song, Z Wang, M Jantz, W Schneider, ... Physical review letters 111 (10), 106601, 2013 | 293 | 2013 |
Enhanced spin pumping at yttrium iron garnet/Au interfaces C Burrowes, B Heinrich, B Kardasz, EA Montoya, E Girt, Y Sun, YY Song, ... Applied Physics Letters 100 (9), 2012 | 199 | 2012 |
Spin transfer torque structure for MRAM devices having a spin current injection capping layer BA Kardasz, MM Pinarbasi US Patent 9,728,712, 2017 | 121 | 2017 |
Magnetic tunnel junction for mram device M Pinarbasi, B Kardasz US Patent App. 14/242,419, 2015 | 101 | 2015 |
Memory cell having magnetic tunnel junction and thermal stability enhancement layer M Pinarbasi, B Kardasz US Patent 9,741,926, 2017 | 99 | 2017 |
Magnetic tunnel junction structure for MRAM device M Pinarbasi, B Kardasz US Patent 9,337,412, 2016 | 98 | 2016 |
Exchange stiffness in thin film Co alloys C Eyrich, W Huttema, M Arora, E Montoya, F Rashidi, C Burrowes, ... Journal of Applied Physics 111 (7), 2012 | 88 | 2012 |
Precessional spin current structure with non-magnetic insertion layer for MRAM BA Kardasz, MM Pinarbasi US Patent 10,665,777, 2020 | 87 | 2020 |
Precessional spin current structure with high in-plane magnetization for MRAM MM Pinarbasi, BA Kardasz US Patent 10,672,976, 2020 | 84 | 2020 |
High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory BA Kardasz, MM Pinarbasi, JA Hernandez US Patent 10,468,590, 2019 | 82 | 2019 |
Magnetic tunnel junction structure for mram device M Pinarbasi, B Kardasz US Patent App. 15/093,367, 2016 | 82 | 2016 |
Magnetization dynamics in the presence of pure spin currents in magnetic single and double layers in spin ballistic and diffusive regimes O Mosendz, G Woltersdorf, B Kardasz, B Heinrich, CH Back Physical Review B 79 (22), 224412, 2009 | 66 | 2009 |
Ferromagnetic resonance studies of accumulation and diffusion of spin momentum density in Fe/Ag/Fe/GaAs (001) and Ag/Fe/GaAs (001) structures B Kardasz, B Heinrich Physical Review B 81 (9), 094409, 2010 | 54 | 2010 |
Time-resolved studies of the spin-transfer reversal mechanism in perpendicularly magnetized magnetic tunnel junctions C Hahn, G Wolf, B Kardasz, S Watts, M Pinarbasi, AD Kent Physical Review B 94 (21), 214432, 2016 | 53 | 2016 |
Spin current studies in Fe∕ Ag, Au∕ Fe by ferromagnetic resonance and time-resolved magneto-optics B Kardasz, O Mosendz, B Heinrich, Z Liu, M Freeman Journal of Applied Physics 103 (7), 2008 | 45 | 2008 |
Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures L Rehm, G Wolf, B Kardasz, M Pinarbasi, AD Kent Applied Physics Letters 115 (18), 2019 | 37 | 2019 |
Precessional spin current structure for MRAM MM Pinarbasi, M Tzoufras, BA Kardasz US Patent 10,026,892, 2018 | 36 | 2018 |
A method for measuring exchange stiffness in ferromagnetic films E Girt, W Huttema, ON Mryasov, E Montoya, B Kardasz, C Eyrich, ... Journal of Applied Physics 109 (7), 2011 | 35 | 2011 |
Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies L Fallarino, V Sluka, B Kardasz, M Pinarbasi, A Berger, AD Kent Applied Physics Letters 109 (8), 2016 | 32 | 2016 |