Colin Humphreys

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Rachel OliverProfessor of Materials Science, Cambridge UniversityVerified email at cam.ac.uk
Philip DawsonUniversity of ManchesterVerified email at manchester.ac.uk
Gianluigi BottonMcMaster UniversityVerified email at mcmaster.ca
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonVerified email at imperial.ac.uk
Dandan ZhuUniversity of CambridgeVerified email at cam.ac.uk
F. C-P. MassabuauUniversity of StrathclydeVerified email at strath.ac.uk
Chris BoothroydNanyang Technological UniversityVerified email at ntu.edu.sg
David HolecMontanuniversität Leoben, AustriaVerified email at unileoben.ac.at
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Verified email at c2n.upsaclay.fr
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordVerified email at physics.ox.ac.uk
T.M. SmeetonVice President, Research at EnvisicsVerified email at envisics.com
Dr. Darren M. GrahamThe University of ManchesterVerified email at manchester.ac.uk
Wai Yuen FuResearch Assistant Professor, Electrical and Electronic Engineering, the University of Hong KongVerified email at hku.hk
Tongtong ZhuUniversity of CambridgeVerified email at cam.ac.uk
James Thomas GriffithsResearch associate, University of CambridgeVerified email at cam.ac.uk
Ranjan DattaProfessorVerified email at jncasr.ac.in
Siyuan ZhangMax-Planck-Institut für Eisenforschung GmbHVerified email at mpie.de
Matthew J. DaviesAttolight AGVerified email at attolight.com
Simon HammersleyResearch Associate, University of ManchesterVerified email at manchester.ac.uk
G A D BriggsProfessor of Nanomaterials, University of OxfordVerified email at materials.ox.ac.uk

Colin Humphreys

Queen Mary University of London

Verified email at qmul.ac.uk

Materials science graphene Gallium Nitride electron microscopy science and religion


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Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton Physical Review B 57 (3), 1505, 1998	14078	1998
Solid-state lighting CJ Humphreys MRS bulletin 33 (4), 459-470, 2008	492	2008
Machine learning predicts laboratory earthquakes B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ... Geophysical Research Letters 44 (18), 9276-9282, 2017	444	2017
Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013	396	2013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003	343	2003
The scattering of fast electrons by crystals CJ Humphreys Reports on Progress in Physics 42 (11), 1825, 1979	315	1979
Absorption parameters in electron diffraction theory PBH CJ Humphreys Philosophical Magazine 18, 115-122, 1968	289	1968
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005	270	2005
Critical thickness calculations for InGaN/GaN D Holec, P Costa, MJ Kappers, CJ Humphreys Journal of Crystal Growth 303 (1), 314-317, 2007	269	2007
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002	252	2002
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013	236	2013
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies Journal of Applied Physics 89 (6), 3143-3150, 2001	225	2001
Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011	218	2011
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007	207	2007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	199	1989
Chemical mapping and formation of V-defects in InGaN multiple quantum wells N Sharma, P Thomas, D Tricker, C Humphreys Applied Physics Letters 77 (9), 1274-1276, 2000	179	2000
Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 2009	178	2009
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003	178	2003
Dopant profiling with the scanning electron microscope—A study of Si SL Elliott, RF Broom, CJ Humphreys Journal of applied physics 91 (11), 9116-9122, 2002	177	2002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons CJHPBH JP Spencer Philosophical Magazine 26, 193-213, 1972	166	1972

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